參數資料
型號: BYW29EXSERIES
廠商: NXP Semiconductors N.V.
元件分類: 基準電壓源/電流源
英文描述: Low noise low drop voltage regulator with shutdown function
中文描述: 整流二極管超快。崎嶇
文件頁數: 2/6頁
文件大?。?/td> 47K
代理商: BYW29EXSERIES
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYW29EX series
ESD LIMITING VALUE
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
C
Electrostatic discharge
capacitor voltage
Human body model;
C = 250 pF; R = 1.5 k
-
8
kV
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
V
isol
R.M.S. isolation voltage from
both terminals to external
heatsink
C
isol
Capacitance from both terminals f = 1 MHz
to external heatsink
CONDITIONS
f = 50-60 Hz; sinusoidal
waveform;
R.H.
65% ; clean and dustfree
MIN.
-
TYP.
MAX.
2500
UNIT
V
-
10
-
pF
THERMAL RESISTANCES
SYMBOL
PARAMETER
R
th j-hs
Thermal resistance junction to
heatsink
R
th j-a
Thermal resistance junction to
ambient
CONDITIONS
with heatsink compound
without heatsink compound
in free air
MIN.
-
-
-
TYP.
-
-
55
MAX.
5.5
7.2
-
UNIT
K/W
K/W
K/W
STATIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
V
F
Forward voltage
CONDITIONS
I
F
= 8 A; T
j
= 150C
I
F
= 8 A
I
F
= 20 A
V
R
= V
RWM
; T
j
= 100 C
V
R
= V
RWM
MIN.
-
-
-
-
-
TYP.
0.80
0.92
1.1
0.2
2
MAX.
0.895
1.05
1.3
0.6
10
UNIT
V
V
V
mA
μ
A
I
R
Reverse current
DYNAMIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
Q
s
Reverse recovery charge
t
rr1
Reverse recovery time
CONDITIONS
I
F
= 2 A; V
R
30 V; -dI
F
/dt = 20 A/
μ
s
I
= 1 A; V
30 V;
-dI
/dt = 100 A/
μ
s
I
F
= 0.5 A to I
= 1 A; I
rec
= 0.25 A
I
F
= 1 A; dI
F
/dt = 10 A/
μ
s
MIN.
-
-
TYP.
4
20
MAX.
11
25
UNIT
nC
ns
t
rr2
V
fr
Reverse recovery time
Forward recovery voltage
-
-
15
1
20
-
ns
V
October 1998
2
Rev 1.200
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