參數(shù)資料
型號: BYW29F-200
廠商: NXP SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: Rectifier diodes ultrafast(超快速整流二極管)
中文描述: 8 A, 200 V, SILICON, RECTIFIER DIODE
封裝: PLASTIC, FULL PACK-2
文件頁數(shù): 1/6頁
文件大小: 41K
代理商: BYW29F-200
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
BYW29F series
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glass
rectifier diodes in full pack, plastic
envelopes, featuring low forward
voltage
drop,
ultra-fast
times
and
characteristic. They are intended for
usein switchedmodepower supplies
andhighfrequencycircuitsin general
where low conduction and switching
losses are essential.
passivated high
efficiency
SYMBOL
PARAMETER
MAX.
MAX.
MAX.
UNIT
BYW29F-
100
100
150
150
200
200
recovery
recovery
V
RRM
Repetitive peak reverse
voltage
Forward voltage
Forward current
Reverse recovery time
V
soft
V
F
I
F(AV)
t
rr
0.895
8
25
0.895
8
25
0.895
8
25
V
A
ns
PINNING - SOD100
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
cathode
2
anode
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
-150
150
150
150
8
UNIT
-100
100
100
100
-200
200
200
200
V
RRM
V
RWM
V
R
I
F(AV)
Repetitive peak reverse voltage
Crest working reverse voltage
Continuous reverse voltage
1
Average forward current
2
-
-
-
-
V
V
V
A
square wave;
δ
= 0.5;
T
106 C
sinusoidal; a = 1.57;
T
hs
109 C
-
7.3
A
I
F(RMS)
I
FRM
RMS forward current
Repetitive peak forward current t = 25
μ
s;
δ
= 0.5;
-
-
11.3
16
A
A
T
109 C
t = 10 ms
t = 8.3 ms
sinusoidal; with reapplied
V
t = 10 ms
I
FSM
Non-repetitive peak forward
current
-
-
80
88
A
A
I
2
t
T
stg
T
j
I
2
t for fusing
Storage temperature
Operating junction temperature
-
32
150
150
A
2
s
C
C
-40
-
1
2
case
k
a
1
T
hs
141C for thermal stability.
2
Neglecting switching and reverse current losses
October 1994
1
Rev 1.100
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