參數(shù)資料
型號(hào): BYW29EX-200
廠商: NXP Semiconductors N.V.
元件分類: 參考電壓二極管
英文描述: Ultrafast power diode
封裝: BYW29EX-200<SOD113 (SOD113)|<<http://www.nxp.com/packages/SOD113.html<1<week 32, 2004,;
文件頁(yè)數(shù): 3/8頁(yè)
文件大?。?/td> 109K
代理商: BYW29EX-200
NXP
Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYW29EX series
ESD LIMITING VALUE
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
C
Electrostatic discharge
capacitor voltage
Human body model;
C = 250 pF; R = 1.5 k
-
8
kV
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
isol
R.M.S. isolation voltage from
both terminals to external
heatsink
f = 50-60 Hz; sinusoidal
waveform;
R.H.
65% ; clean and dustfree
-
2500
V
C
isol
Capacitance from both terminals f = 1 MHz
to external heatsink
-
10
-
pF
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-hs
Thermal resistance junction to
heatsink
Thermal resistance junction to
ambient
with heatsink compound
without heatsink compound
in free air
-
-
-
-
-
5.5
7.2
-
K/W
K/W
K/W
R
th j-a
55
STATIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
F
Forward voltage
I
F
= 8 A; T
j
= 150C
I
F
= 8 A
I
F
= 20 A
V
R
= V
RWM
; T
j
= 100 C
V
R
= V
RWM
-
-
-
-
-
0.80
0.92
1.1
0.2
2
0.895
1.05
1.3
0.6
10
V
V
V
I
R
Reverse current
mA
μ
A
DYNAMIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
I
F
= 2 A; V
R
30 V; -dI
F
/dt = 20 A/
μ
s
I
= 1 A; V
30 V;
-dI
/dt = 100 A/
μ
s
I
F
= 0.5 A to I
= 1 A; I
rec
= 0.25 A
I
F
= 1 A; dI
F
/dt = 10 A/
μ
s
MIN.
TYP.
MAX.
UNIT
Q
s
t
rr1
Reverse recovery charge
Reverse recovery time
-
-
4
20
11
25
nC
ns
t
rr2
V
fr
Reverse recovery time
Forward recovery voltage
-
-
15
1
20
-
ns
V
October 1998
2
Rev 1.200
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