參數(shù)資料
型號: BYW29EX-200
廠商: NXP Semiconductors N.V.
元件分類: 參考電壓二極管
英文描述: Ultrafast power diode
封裝: BYW29EX-200<SOD113 (SOD113)|<<http://www.nxp.com/packages/SOD113.html<1<week 32, 2004,;
文件頁數(shù): 2/8頁
文件大?。?/td> 109K
代理商: BYW29EX-200
NXP
Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYW29EX series
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glass
diodes in a full pack plastic envelope,
featuring low forward voltage drop,
ultra-fast recovery times, soft recovery
characteristic and guaranteed reverse
surge and ESD capability. They are
intendedforuseinswitchedmodepower
supplies and high frequency circuits in
general where low conduction and
switching losses are essential.
passivated
epitaxial
rectifier
SYMBOL
PARAMETER
MAX.
MAX.
UNIT
BYW29EX-
150
150
200
200
V
RRM
Repetitive peak reverse
voltage
Forward voltage
Forward current
Reverse recovery time
Repetitive peak reverse
current
V
V
F
I
F(AV)
t
rr
I
RRM
0.895
8
25
0.2
0.895
8
25
0.2
V
A
ns
A
PINNING - SOD113
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
cathode
2
anode
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
-150
150
150
150
-200
200
200
200
V
RRM
V
RWM
V
R
I
F(AV)
Repetitive peak reverse voltage
Crest working reverse voltage
Continuous reverse voltage
Average forward current
1
-
-
-
V
V
V
square wave;
δ
= 0.5;
T
106 C
sinusoidal; a = 1.57;
T
hs
109 C
-
8
A
-
-
-
7.3
11.3
16
A
A
A
I
F(RMS)
I
FRM
RMS forward current
Repetitive peak forward current t = 25
μ
s;
δ
= 0.5;
T
106 C
t = 10 ms
t = 8.3 ms
sinusoidal; with reapplied
V
t = 10 ms
I
FSM
Non-repetitive peak forward
current
-
-
80
88
A
A
I
2
t
I
RRM
I
RSM
I
2
t for fusing
Repetitive peak reverse current t
p
= 2
μ
s;
δ
= 0.001
Non-repetitive peak reverse
current
Storage temperature
Operating junction temperature
-
-
-
32
0.2
0.2
A
2
s
A
A
t
p
= 100
μ
s
T
stg
T
j
-40
-
150
150
C
C
1
2
case
k
1
a
2
1
Neglecting switching and reverse current losses
October 1998
1
Rev 1.200
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