參數(shù)資料
型號: BYV97
廠商: NXP Semiconductors N.V.
英文描述: Hook-Up Wire; Conductor Size AWG:22; No. Strands x Strand Size:7 x 30; Jacket Color:Red; Approval Bodies:UL; Approval Categories:UL AWM Style 1213; Passes VW-1 Flame Test; Cable/Wire MIL SPEC:MIL-W-16878/4 Type E RoHS Compliant: Yes
中文描述: 快速軟恢復(fù)控制雪崩整流器
文件頁數(shù): 3/9頁
文件大?。?/td> 56K
代理商: BYV97
1996 Jun 07
3
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYV97 series
ELECTRICAL CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1.
Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer
40
μ
m, see Fig. 12.
For more information please refer to the “General Part of associated Handbook”
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
F
forward voltage
I
F
= 3 A; T
j
= T
j max
; see Fig.8
I
F
= 3 A; see Fig.8
I
R
= 0.1 mA
1.35
1.65
V
V
V
(BR)R
reverse avalanche
breakdown voltage
BYV97F
BYV97G
reverse current
1300
1500
V
V
μ
A
I
R
V
R
= V
RRMmax
;
see Fig.9
V
R
= V
RRMmax
; T
j
= 165
°
C;
see Fig.9
when switched from I
F
= 0.5 A
to I
R
= 1 A; measured at
I
R
= 0.25 A; see Fig.14
f = 1 MHz; V
R
= 0 V; see Fig.11
when switched from I
F
= 1 A to
V
R
30 V and dI
F
/dt =
1 A/
μ
s;
see Figs 10 and 13
1
150
μ
A
t
rr
reverse recovery time
500
ns
C
d
dI
R
dt
diode capacitance
maximum slope of
reverse recovery current
35
pF
A/
μ
s
5
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-tp
R
th j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
lead length = 10 mm
note 1
46
K/W
K/W
100
--------
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