參數(shù)資料
型號: BYW29EB-150
廠商: NXP SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: Rectifier diodes ultrafast, rugged
中文描述: 8 A, 150 V, SILICON, RECTIFIER DIODE
封裝: PLASTIC PACKAGE-3
文件頁數(shù): 1/8頁
文件大小: 59K
代理商: BYW29EB-150
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYW29EB, BYW29ED series
FEATURES
SYMBOL
QUICK REFERENCE DATA
Low forward volt drop
Fast switching
Soft recovery characteristic
Reverse surge capability
High thermal cycling performance
Low thermal resistance
V
R
= 150 V/ 200 V
V
F
0.895 V
I
F(AV)
= 8 A
I
RRM
= 0.2 A
t
rr
25 ns
GENERAL DESCRIPTION
Ultra-fast,epitaxialrectifierdiodesintendedforuseasoutputrectifiersinhighfrequencyswitchedmodepowersupplies.
The BYW29EB series is supplied in the SOT404 surface mounting package.
The BYW29ED series is supplied in the SOT428 surface mounting package.
PINNING
SOT404
SOT428
PIN
DESCRIPTION
1
no connection
2
cathode
1
3
anode
tab
cathode
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
BYW29EB/ BYW29ED
-150
150
-200
200
V
RRM
Peak repetitive reverse
voltage
Working peak reverse
voltage
Continuous reverse voltage
Average rectified forward
current
Repetitive peak forward
current
Non-repetitive peak forward
current
-
V
V
RWM
-
150
200
V
V
R
I
F(AV)
-
-
150
200
V
A
square wave;
δ
= 0.5; T
mb
128 C
8
I
FRM
square wave;
δ
= 0.5; T
mb
128 C
-
16
A
I
FSM
t = 10 ms
t = 8.3 ms
sinusoidal; with reapplied V
RRM(max)
t
p
= 2
μ
s;
δ
= 0.001
-
-
80
88
A
A
I
RRM
Peak repetitive reverse
surge current
Peak non-repetitive reverse
surge current
Operating junction
temperature
Storage temperature
1
. It is not possible to make connection to pin 2 of the SOT428 or SOT404 packages.
-
0.2
A
I
RSM
t
p
= 100
μ
s
-
0.2
A
T
j
-
150
C
T
stg
- 40
150
C
k
a
3
tab
1
2
3
tab
1
3
tab
2
November 1998
1
Rev 1.300
相關(guān)PDF資料
PDF描述
BYW29ED-150 Rectifier diodes ultrafast, rugged
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BYW29EB Rectifier diodes ultrafast, rugged
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