參數(shù)資料
型號(hào): BYV79EB-150
廠(chǎng)商: NXP SEMICONDUCTORS
元件分類(lèi): 參考電壓二極管
英文描述: Rectifier diodes ultrafast, rugged
中文描述: 14 A, 150 V, SILICON, RECTIFIER DIODE
封裝: PLASTIC PACKAGE-3
文件頁(yè)數(shù): 4/7頁(yè)
文件大小: 50K
代理商: BYV79EB-150
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYV79EB series
Fig.7. Maximum t
rr
at T
j
= 25 C.
Fig.8. Maximum I
rrm
at T
j
= 25 C.
Fig.9. Typical and maximum forward characteristic
I
F
= f(V
F
); parameter T
j
Fig.10. Maximum Q
s
at T
j
= 25 C.
Fig.11. Transient thermal impedance; Z
th j-mb
= f(t
p
).
1
10
trr / ns
1
10
100
1000
dIF/dt (A/us)
IF=1A
IF=10A
100
1.0
10
100
Qs / nC
1.0
10
100
-dIF/dt (A/us)
1000
IF=10A
5A
2A
10
1
0.1
0.01
Irrm / A
1
10
100
-dIF/dt (A/us)
IF=10A
IF=2A
1us
10us
100us
1ms
10ms
100ms
1s
10s
0.001
0.01
0.1
1
10
BYV79E
pulse width, tp (s)
Transient thermal impedance, Zth j-mb (K/W)
D =
t
p
t
p
T
T
P
t
D
0
2
60
50
40
30
20
10
0
max
typ
Tj = 150 C
Tj = 25 C
1.0
VF / V
0.5
IF / A
1.5
July 1998
4
Rev 1.100
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