參數(shù)資料
型號: BYV79EB-150
廠商: NXP SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: Rectifier diodes ultrafast, rugged
中文描述: 14 A, 150 V, SILICON, RECTIFIER DIODE
封裝: PLASTIC PACKAGE-3
文件頁數(shù): 2/7頁
文件大小: 50K
代理商: BYV79EB-150
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYV79EB series
THERMAL RESISTANCES
SYMBOL
PARAMETER
R
th j-mb
Thermal resistance junction to
mounting base
R
th j-a
Thermal resistance junction to
ambient
CONDITIONS
MIN.
-
TYP.
-
MAX.
2
UNIT
K/W
minimum footprint, FR4 board
-
50
-
K/W
ELECTRICAL CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
V
F
Forward voltage
CONDITIONS
I
F
= 14 A; T
j
= 150C
I
F
= 14 A
I
F
= 50 A
V
R
= V
RRM
; T
j
= 100 C
V
= V
I
F
= 2 A; V
R
30 V; -dI
F
/dt = 20 A/
μ
s
I
= 1 A; V
30 V;
-dI
/dt = 100 A/
μ
s
I
F
= 0.5 A to I
= 1 A; I
rec
= 0.25 A
I
F
= 1 A; dI
F
/dt = 10 A/
μ
s
MIN.
-
-
-
-
-
-
-
TYP.
0.83
0.95
1.2
0.5
5
6
20
MAX.
0.90
1.05
1.4
1.3
50
15
30
UNIT
V
V
V
mA
μ
A
nC
ns
I
R
Reverse current
Q
s
t
rr1
Reverse recovery charge
Reverse recovery time
t
rr2
V
fr
Reverse recovery time
Forward recovery voltage
-
-
13
1
22
-
ns
V
July 1998
2
Rev 1.100
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