參數(shù)資料
型號(hào): BYV32E
廠商: NXP SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: ECONOLINE: RQS & RQD - 1kVDC Isolation- Internal SMD Construction- UL94V-0 Package Material- Toroidal Magnetics- Efficiency to 80%
中文描述: 20 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB
文件頁(yè)數(shù): 3/7頁(yè)
文件大?。?/td> 52K
代理商: BYV32E
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYV32E, BYV32EB series
Fig.1. Definition of t
rr1
, Q
s
and I
rrm
Fig.2. Definition of V
fr
Fig.3. Circuit schematic for t
rr2
Fig.4. Definition of t
rr2
Fig.5. Maximum forward dissipation P
= f(I
) per
diode; square current waveform where
I
F(AV)
=I
F(RMS)
x
D.
Fig.6. Maximum forward dissipation P
= f(I
) per
diode; sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
F(AV)
.
Qs
100%
10%
time
dI
dt
F
IR
IF
Irrm
trr
R
rec
I
= 0.25A
0A
trr2
0.5A
IF
IR
time
time
VF
Vfr
VF
IF
0
5
10
15
0
5
10
15
D = 1.0
0.5
0.2
0.1
BYV32
IF(AV) / A
PF / W
Vo = 0.7 V
Tmb(max) / C
150
138
126
114
Rs = 0.0183 Ohms
D =
t
p
t
p
T
T
t
I
shunt
Current
to ’scope
D.U.T.
Voltage Pulse Source
R
0
2
4
6
8
10
0
2
4
6
8
10
1.9
2.2
2.8
4
BYV32
IF(AV) / A
PF / W
Vo = 0.7 V
a = 1.57
Tmb(max) / C
150
145.2
140.4
135.6
130.8
126
Rs = 0.0183 Ohms
July 1998
3
Rev 1.200
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