參數(shù)資料
型號: BYV32E-150 -200
廠商: NXP Semiconductors N.V.
英文描述: Rectifier diodes ultrafast, rugged(超快速、強化的整流二極管)
中文描述: 整流二極管超快,堅固耐用(超快速,強化的整流二極管)
文件頁數(shù): 1/7頁
文件大小: 52K
代理商: BYV32E-150 -200
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYV32E, BYV32EB series
FEATURES
SYMBOL
QUICK REFERENCE DATA
Low forward volt drop
Fast switching
Soft recovery characteristic
Reverse surge capability
High thermal cycling performance
Low thermal resistance
V
R
= 150 V/ 200 V
V
F
0.85 V
I
O(AV)
= 20 A
I
RRM
= 0.2 A
t
rr
25 ns
GENERAL DESCRIPTION
Dual, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power
supplies.
The BYV32E series is supplied in the SOT78 conventional leaded package.
The BYV32EB series is supplied in the SOT404 surface mounting package.
PINNING
SOT78 (TO220AB)
SOT404
PIN
DESCRIPTION
1
anode 1 (a)
2
cathode (k)
1
3
anode 2 (a)
tab
cathode (k)
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
BYV32E / BYV32EB
-150
150
-200
200
V
RRM
Peaqk repetitive reverse
voltage
Crest working reverse voltage
Continuous reverse voltage
Average rectified output current square wave;
δ
= 0.5;
(both diodes conducting)
Repetitive peak forward current t = 25
μ
s;
δ
= 0.5;
per diode
Non-repetitive peak forward
current per diode
-
V
V
RWM
V
R
I
O(AV)
-
-
-
150
150
200
200
V
V
A
20
T
115 C
I
FRM
-
20
A
T
115 C
t = 10 ms
t = 8.3 ms
sinusoidal; with reapplied
V
I
FSM
-
-
125
137
A
A
I
RRM
Repetitive peak reverse current t
p
= 2
μ
s;
δ
= 0.001
per diode
Non-repetitive peak reverse
current per diode
Storage temperature
Operating junction temperature
1 It is not possible to make connection to pin 2 of the SOT404 package
-
0.2
A
I
RSM
t
p
= 100
μ
s
-
0.2
A
T
stg
T
j
-40
-
150
150
C
C
k
a1
1
a2
3
2
1
3
tab
2
1 2 3
tab
July 1998
1
Rev 1.200
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