參數(shù)資料
型號: BYV32
廠商: NXP SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: ECONOLINE: RQS & RQD - 1kVDC Isolation- Internal SMD Construction- UL94V-0 Package Material- Toroidal Magnetics- Efficiency to 80%
中文描述: 20 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB
文件頁數(shù): 2/6頁
文件大?。?/td> 34K
代理商: BYV32
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
BYV32 series
THERMAL RESISTANCES
SYMBOL
PARAMETER
R
th j-mb
Thermal resistance junction to
mounting base
R
th j-a
Thermal resistance junction to
ambient
CONDITIONS
per diode
both diodes conducting
in free air
MIN.
-
-
-
TYP.
-
-
60
MAX.
2.4
1.6
-
UNIT
K/W
K/W
K/W
STATIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
V
F
Forward voltage (per diode)
CONDITIONS
I
F
= 8 A; T
j
= 150C
I
F
= 20 A
V
R
= V
RWM
; T
j
= 100 C
V
R
= V
RWM
MIN.
-
-
-
-
TYP.
0.72
1.00
0.2
6
MAX.
0.85
1.15
0.6
30
UNIT
V
V
mA
μ
A
I
R
Reverse current (per diode)
DYNAMIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
Q
s
Reverse recovery charge (per
diode)
t
rr
Reverse recovery time (per
diode)
I
rrm
Peak reverse recovery current
(per diode)
V
fr
Forward recovery voltage (per
diode)
CONDITIONS
I
F
= 2 A; V
R
30 V; -dI
F
/dt = 20 A/
μ
s
MIN.
-
TYP.
8
MAX.
12.5
UNIT
nC
I
= 1 A; V
30 V;
-dI
/dt = 100 A/
μ
s
I
= 1 A; V
30 V;
-dI
/dt = 50 A/
μ
s; T
= 100 C
I
F
= 1 A; dI
F
/dt = 10 A/
μ
s
-
20
25
ns
-
1.5
2
A
-
1
-
V
October 1994
2
Rev 1.100
相關PDF資料
PDF描述
BYV32-100SMD 1.5 A low drop positive voltage regulator adjustable and fixed
BYV32-150SMD 1.5 A low drop positive voltage regulator adjustable and fixed
BYV32-200SMD 1.5 A low drop positive voltage regulator adjustable and fixed
BYV32-200SMDCECC 1.5 A low drop positive voltage regulator adjustable and fixed
BYV32-200XM 1.5 A low drop positive voltage regulator adjustable and fixed
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