參數(shù)資料
型號: BYV28-300
廠商: NXP SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: Ultra fast low-loss controlled avalanche rectifier(超快速低損耗控制的雪崩整流器)
中文描述: 1.9 A, 300 V, SILICON, RECTIFIER DIODE
封裝: HERMETIC SEALED, GLASS PACKAGE-2
文件頁數(shù): 4/16頁
文件大小: 100K
代理商: BYV28-300
1997 Nov 24
4
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYV28 series
THERMAL CHARACTERISTICS
Note
1.
Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer
40
μ
m, see Fig.20
For more information please refer to the “General Part of associated Handbook”
C
d
diode capacitance
BYV28-50 to 200
BYV28-300 and 400
BYV28-500 and 600
maximum slope of reverse
recovery current
f = 1 MHz; V
R
= 0;
see Figs 17, 18 and 19
190
150
125
4
pF
pF
pF
A/
μ
s
when switched from
I
F
= 1 A to V
R
30 V and
dI
F
/dt =
1 A/
μ
s; see Fig.21
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-tp
R
th j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
lead length = 10 mm
note 1
25
75
K/W
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
dI
R
dt
--------
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