參數(shù)資料
型號: BYV28-300
廠商: NXP SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: Ultra fast low-loss controlled avalanche rectifier(超快速低損耗控制的雪崩整流器)
中文描述: 1.9 A, 300 V, SILICON, RECTIFIER DIODE
封裝: HERMETIC SEALED, GLASS PACKAGE-2
文件頁數(shù): 3/16頁
文件大?。?/td> 100K
代理商: BYV28-300
1997 Nov 24
3
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYV28 series
ELECTRICAL CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
I
FRM
repetitive peak forward current
BYV28-50 to 400
BYV28-500 and 600
repetitive peak forward current
BYV28-50 to 400
BYV28-500 and 600
non-repetitive peak forward current
T
tp
= 85
°
C; see Figs 6 and 7
32
31
A
A
I
FRM
T
amb
= 60
°
C; see Figs 8 and 9
17
16
90
A
A
A
I
FSM
t = 10 ms half sine wave;
T
j
= T
j max
prior to surge;
V
R
= V
RRMmax
L = 120 mH; T
j
= T
j max
prior to
surge; inductive load switched off
E
RSM
non-repetitive peak reverse
avalanche energy
storage temperature
junction temperature
20
mJ
T
stg
T
j
65
65
+175
+175
°
C
°
C
see Fig.12
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
F
forward voltage
BYV28-50 to 200
BYV28-300 and 400
BYV28-500 and 600
forward voltage
BYV28-50 to 200
BYV28-300 and 400
BYV28-500 and 600
reverse avalanche breakdown
voltage
BYV28-50
BYV28-100
BYV28-150
BYV28-200
BYV28-300
BYV28-400
BYV28-500
BYV28-600
reverse current
I
F
= 3.5 A; T
j
= T
j max
;
see Figs 13, 14 and 15
0.80
0.83
0.98
V
V
V
V
F
I
F
= 3.5 A;
see Figs 13, 14 and 15
1.02
1.05
1.25
V
V
V
V
(BR)R
I
R
= 0.1 mA
55
110
165
220
330
440
560
675
V
V
V
V
V
V
V
V
μ
A
μ
A
I
R
V
R
= V
RRMmax
; see Fig.16
V
R
= V
RRMmax
; T
j
= 165
°
C;
see Fig.16
when switched from
I
F
= 0.5 A to I
R
= 1 A;
measured at I
R
= 0.25 A;
see Fig.22
5
150
t
rr
reverse recovery time
BYV28-50 to 200
BYV28-300 to 600
25
50
ns
ns
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
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