參數(shù)資料
型號(hào): BYV27-300
廠商: NXP SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: Ultra fast low-loss controlled avalanche rectifiers
中文描述: 1.25 A, 300 V, SILICON, RECTIFIER DIODE
封裝: HERMETIC SEALED, GLASS PACKAGE-2
文件頁(yè)數(shù): 4/16頁(yè)
文件大?。?/td> 110K
代理商: BYV27-300
1997 Nov 24
4
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYV27 series
THERMAL CHARACTERISTICS
Note
1.
Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer
40
μ
m, see Fig. 25.
For more information please refer to the “General Part of associated Handbook”
t
rr
reverse recovery time
BYV27-50 to 200
BYV27-300 to 600
when switched from
I
F
= 0.5 A to I
R
= 1 A;
measured at I
R
= 0.25 A;
see Fig. 27
f = 1 MHz; V
R
= 0;
see Figs 22, 23 and 24
25
50
ns
ns
C
d
diode capacitance
BYV27-50 to 200
BYV27-300 and 400
BYV27-500 and 600
maximum slope of reverse recovery
current
100
80
65
pF
pF
pF
A/
μ
s
when switched from
I
F
= 1 A to V
R
30 V
and dI
F
/dt =
1 A/
μ
s;
see Fig. 26
4
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-tp
R
th j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
lead length = 10 mm
note 1
46
100
K/W
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
dI
R
dt
--------
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