參數(shù)資料
型號(hào): BYV27-300
廠商: NXP SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: Ultra fast low-loss controlled avalanche rectifiers
中文描述: 1.25 A, 300 V, SILICON, RECTIFIER DIODE
封裝: HERMETIC SEALED, GLASS PACKAGE-2
文件頁數(shù): 3/16頁
文件大?。?/td> 110K
代理商: BYV27-300
1997 Nov 24
3
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYV27 series
ELECTRICAL CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
I
FRM
repetitive peak forward current
BYV27-50 to 400
BYV27-500 and 600
repetitive peak forward current
BYV27-50 to 200
BYV27-300 and 400
BYV27-500 and 600
non-repetitive peak forward current
BYV27-50 to 400
BYV27-500 and 600
non-repetitive peak reverse
avalanche energy
storage temperature
junction temperature
T
tp
= 85
°
C; see Figs 8, 9 and 10
20
16
A
A
I
FRM
T
amb
= 60
°
C;
see Figs 11, 12 and 13
14
13
11
A
A
A
I
FSM
t = 10 ms half sine wave;
T
j
= T
j max
prior to surge;
V
R
= V
RRMmax
50
40
20
A
A
mJ
E
RSM
L = 120 mH; T
j
= T
j max
prior to
surge; inductive load switched off
T
stg
T
j
65
65
+175
+175
°
C
°
C
see Fig. 17
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
F
forward voltage
BYV27-50 to 200
BYV27-300 and 400
BYV27-500 and 600
forward voltage
BYV27-50 to 200
BYV27-300 and 400
BYV27-500 and 600
reverse avalanche breakdown
voltage
BYV27-50
BYV27-100
BYV27-150
BYV27-200
BYV27-300
BYV27-400
BYV27-500
BYV27-600
reverse current
I
F
= 2 A; T
j
= T
j max
;
see Figs 18, 19 and 20
0.78
0.82
1.00
V
V
V
V
F
I
F
= 2 A;
see Figs 18, 19 and 20
0.98
1.05
1.25
V
V
V
V
(BR)R
I
R
= 0.1 mA
55
110
165
220
330
440
560
675
V
V
V
V
V
V
V
V
μ
A
I
R
V
R
= V
RRMmax
;
see Fig. 21
V
R
= V
RRMmax
;
T
j
= 165
°
C; see Fig. 21
5
150
μ
A
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
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