參數(shù)資料
型號: BYV133F-35
廠商: NXP SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: Rectifier diodes schottky barrier
中文描述: 20 A, 35 V, SILICON, RECTIFIER DIODE
文件頁數(shù): 2/5頁
文件大?。?/td> 31K
代理商: BYV133F-35
Philips Semiconductors
Product specification
Rectifier diodes
schottky barrier
BYV133F series
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
V
isol
Repetitive peak voltage from all
three terminals to external
heatsink
C
isol
Capacitance from T2 to external f = 1 MHz
heatsink
CONDITIONS
R.H.
65% ; clean and dustfree
MIN.
-
TYP.
MAX.
1500
UNIT
V
-
12
-
pF
THERMAL RESISTANCES
SYMBOL
PARAMETER
R
th j-hs
Thermal resistance junction to
heatsink
CONDITIONS
per diode
both diodes
(with heatsink compound)
in free air.
MIN.
-
-
TYP.
-
-
MAX.
6
5
UNIT
K/W
K/W
R
th j-a
Thermal resistance junction to
ambient
-
55
-
K/W
STATIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
V
F
Forward voltage (per diode)
CONDITIONS
I
F
= 7 A; T
j
= 150C
I
F
= 20 A
V
R
= V
RRM
V
= V
; T
j
= 125 C
f = 1MHz; V
R
= 5V; T
j
= 25 C to
125 C
MIN.
-
-
-
-
-
TYP.
0.55
0.88
50
4
300
MAX.
0.60
0.94
100
15
-
UNIT
V
V
μ
A
mA
pF
I
R
Reverse current (per diode)
C
d
Junction capacitance (per
diode)
August 1996
2
Rev 1.100
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