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參數(shù)資料
| 型號： | BYV133F |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | IC 32-BIT BUS SWITCH 80-BQSOP |
| 中文描述： | 20 A, 35 V, SILICON, RECTIFIER DIODE |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 31K |
| 代理商： | BYV133F |
Philips Semiconductors
Product specification
Rectifier diodes
schottky barrier
BYV133F series
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Dual, low leakage, platinum barrier,
schottky rectifier diodes in a full pack
plastic
envelope
forward voltage drop, absence of
stored
charge.
reversesurgecapability.Thedevices
areintendedforuseinswitchedmode
power supplies and high frequency
circuits
in
general
conductionandzeroswitchinglosses
are important.
SYMBOL
PARAMETER
MAX.
MAX.
MAX.
UNIT
featuring
low
BYV133F-
35
35
40
40
45
45
V
RRM
Repetitive peak reverse
voltage
Forward voltage
Average output current
(both diodes conducting)
V
and
guaranteed
V
F
I
O(AV)
0.60
20
0.60
20
0.60
20
V
A
where
low
PINNING - SOT186
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
anode 1 (a)
2
cathode (k)
3
anode 2 (a)
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
-40
40
40
40
20
UNIT
-35
35
35
35
-45
45
45
45
V
RRM
V
RWM
V
R
I
O(AV)
Repetitive peak reverse voltage
Crest working reverse voltage
Continuous reverse voltage
Average output current (both
diodes conducting)
RMS output current (both
diodes conducting)
Repetitive peak forward current t = 25
μ
s;
δ
= 0.5;
per diode
Non-repetitive peak forward
current, per diode
-
-
-
-
V
V
V
A
T
hs
≤
112 C
square wave;
δ
= 0.5;
T
hs
≤
61 C
I
O(RMS)
-
20
A
I
FRM
-
20
A
T
≤
61 C
t = 10 ms
t = 8.3 ms
sinusoidal T
= 125 C prior
to surge; with reapplied
V
t = 10 ms
I
FSM
-
-
100
110
A
A
I
2
t
I
RRM
I
2
t for fusing
Repetitive peak reverse current t
p
= 2
μ
s;
δ
= 0.001
per diode.
Non-repetitive peak reverse
current per diode.
Storage temperature
Operating junction temperature
-
-
50
1
A
2
s
A
I
RSM
t
p
= 100
μ
s
-
1
A
T
stg
T
j
-65
-
175
150
C
C
1 2 3
case
k
a1
1
a2
3
2
August 1996
1
Rev 1.100
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BYV133F-35 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Rectifier diodes schottky barrier |
| BYV133F-40 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Rectifier diodes schottky barrier |
| BYV133F-45 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Rectifier diodes schottky barrier |
| BYV13-TAP | 功能描述:整流器 400 Volt 1.5 Amp 40 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| BYV13-TR | 功能描述:整流器 400 Volt 1.5 Amp 40 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
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