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參數(shù)資料
| 型號(hào)： | BYV118X-40 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | DB-25 MALE CONN KIT CRIMP |
| 中文描述： | 10 A, 40 V, SILICON, RECTIFIER DIODE |
| 文件頁(yè)數(shù)： | 3/6頁(yè) |
| 文件大?。?/td> | 42K |
| 代理商： | BYV118X-40 |
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
BYV118F, BYV118X series
Fig.1. Maximum forward dissipation P
= f(I
) per
diode; square current waveform where
I
F(AV)
=I
F(RMS)
x
√
D.
Fig.2. Maximum forward dissipation P
= f(I
) per
diode; sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
F(AV)
.
Fig.3. Typical and maximum forward characteristic
I
F
= f(V
F
); parameter T
j
Fig.4. Typical reverse leakage current per diode;
I
R
= f(V
R
); parameter T
j
Fig.5. Typical junction capacitance per diode;
C
d
= f(V
R
); f = 1 MHz; T
j
= 25C to 125 C.
Fig.6. Transient thermal impedance; per diode;
Z
th j-hs
= f(t
p
).
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
D = 1.0
0.5
0.2
0.1
PBYR1045CTD
Rs = 0.034 Ohms
Vo = 0.43 V
T
I
D =
t
p
t
p
T
t
Ths(max) / C
150
Average forward current, IF(AV) (A)
Forward dissipation, PF (W)
143.5
137
130.5
124
117.5
0
25
50
100
10
1
0.1
0.01
Reverse current, IR (mA)
Reverse voltage, VR (V)
PBYR645CT
50 C
75 C
100 C
Tj = 25 C
125 C
0
1
2
3
4
5
0
1
2
3
4
5
a = 1.57
1.9
2.2
2.8
4
PBYR1045CTD
Rs = 0.034 Ohms
Vo = 0.43 V
Ths(max) / C
150
Average forward current, IF(AV) (A)
Forward dissipation, PF (W)
143.5
137
130.5
124
117.5
1
10
100
10
1000
100
Cd / pF
VR / V
PBYR645CT
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0
5
10
15
20
BYV118
Forward voltage, VF (V)
Forward current, IF (A)
Tj = 25 C
Tj = 125 C
max
typ
0.01
0.1
1
10
BYV118X
1us
10us
100us
1ms
10ms
100ms
1s
10s
pulse width, tp (s)
Transient thermal impedance, Zth j-hs (K/W)
D =
t
p
t
p
T
T
P
t
D
May 1998
3
Rev 1.100
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|---|---|
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| BYV12-TAP | 功能描述:整流器 100 Volt 1.5 Amp 40 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
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