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參數(shù)資料
| 型號： | BYV118F-40 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | ECONOLINE: RQS & RQD - 1kVDC Isolation- Internal SMD Construction- UL94V-0 Package Material- Toroidal Magnetics- Efficiency to 80% |
| 中文描述： | 10 A, 40 V, SILICON, RECTIFIER DIODE |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 42K |
| 代理商： | BYV118F-40 |
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
BYV118F, BYV118X series
FEATURES
SYMBOL
QUICK REFERENCE DATA
Low forward volt drop
Fast switching
Reverse surge capability
High thermal cycling performance
Isolated package
V
R
= 35 V/ 40 V/ 45 V
I
O(AV)
= 10 A
V
F
≤
0.6 V
GENERAL DESCRIPTION
Dual, common cathode schottky rectifier diodes in a plastic envelope with electrically isolated mounting tab. Intended
for use as output rectifiers in low voltage, high frequency switched mode power supplies.
The BYV118F series is supplied in the SOT186 package.
The BYV118X series is supplied in the SOT186A package.
PINNING
SOT186
SOT186A
PIN
DESCRIPTION
1
anode 1 (a)
2
cathode (k)
3
anode 2 (a)
tab
isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
40
40
40
UNIT
BYV118F-
BYV118X-
35
35
35
45
45
45
V
RRM
Peak repetitive reverse
voltage
Working peak reverse
voltage
Continuous reverse voltage
Average rectified output
current (both diodes
conducting)
Repetitive peak forward
current per diode
Non-repetitive peak forward
current per diode
-
V
V
RWM
-
35
40
45
V
V
R
I
O(AV)
T
hs
≤
97 C
square wave;
δ
= 0.5;
T
hs
≤
107 C
-
-
35
40
10
45
V
A
I
FRM
square wave;
δ
= 0.5;
T
≤
107 C
t = 10 ms
t = 8.3 ms
sinusoidal; T
= 125 C prior to
surge; with reapplied V
pulse width and repetition rate
limited by T
j max
-
10
A
I
FSM
-
-
100
110
A
A
I
RRM
Peak repetitive reverse
surge current per diode
Operating junction
temperature
Storage temperature
-
1
A
T
j
-
150
C
T
stg
- 65
175
C
k
a1
1
a2
3
2
1 2 3
case
1 2 3
case
May 1998
1
Rev 1.100
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BYV118F-45 | Rectifier diodes Schottky barrier |
| BYV118X | Rectifier diodes Schottky barrier |
| BYV160 | Ultra fast low-loss rectifier |
| BYW28 | Ultra fast low-loss controlled avalanche rectifier |
| BYW28-600 | Ultra fast low-loss controlled avalanche rectifier |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BYV118F-45 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Rectifier diodes Schottky barrier |
| BYV118X | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Rectifier diodes Schottky barrier |
| BYV118X-35 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Rectifier diodes Schottky barrier |
| BYV118X-40 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Rectifier diodes Schottky barrier |
| BYV118X-45 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Rectifier diodes Schottky barrier |
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