參數(shù)資料
型號: BYV118-45
廠商: NXP SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: Rectifier diodes Schottky barrier
中文描述: 10 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB
封裝: PLASTIC, TO-220AB, 3 PIN
文件頁數(shù): 2/6頁
文件大?。?/td> 36K
代理商: BYV118-45
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
BYV118, BYV118B series
THERMAL RESISTANCES
SYMBOL PARAMETER
R
th j-mb
Thermal resistance junction
to mounting base
R
th j-a
Thermal resistance junction
to ambient
CONDITIONS
per diode
both diodes
SOT78 package in free air
SOT404 package, pcb mounted, minimum
footprint, FR4 board
MIN.
-
-
-
-
TYP. MAX. UNIT
-
4.5
-
3
60
-
50
-
K/W
K/W
K/W
K/W
ELECTRICAL CHARACTERISTICS
T
j
= 25 C unless otherwise specified
SYMBOL PARAMETER
V
F
Forward voltage per diode
CONDITIONS
I
F
= 5 A; T
j
= 125C
I
F
= 10 A
V
R
= V
RWM
V
R
= V
; T
= 100C
V
R
= 5 V; f = 1 MHz, T
j
= 25C to 125C
MIN.
-
-
-
-
-
TYP. MAX. UNIT
0.52
0.6
0.72
0.87
0.06
0.5
6
15
155
-
V
V
I
R
Reverse current per diode
mA
mA
pF
C
d
Junction capacitance per
diode
May 1998
2
Rev 1.300
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