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參數(shù)資料
| 型號(hào)： | BYQ28EX |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | EHN282-0035 CABLE WITH A PLENUM JACKET |
| 中文描述： | 10 A, 200 V, SILICON, RECTIFIER DIODE |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 54K |
| 代理商： | BYQ28EX |
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYQ28F, BYQ28EX series
ESD LIMITING VALUE
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
C
Electrostatic discharge
capacitor voltage
Human body model;
C = 250 pF; R = 1.5 k
-
8
kV
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 C unless otherwise specified
SYMBOL PARAMETER
V
isol
Peak isolation voltage from
all terminals to external
heatsink
V
isol
R.M.S. isolation voltage from SOT186A package; f = 50-60 Hz;
all terminals to external
heatsink
C
isol
Capacitance from pin 2 to
external heatsink
CONDITIONS
SOT186 package; R.H.
≤
65%; clean and
dustfree
MIN.
-
TYP. MAX. UNIT
-
1500
V
-
-
2500
V
sinusoidal waveform; R.H.
≤
65%; clean
and dustfree
f = 1 MHz
-
10
-
pF
THERMAL RESISTANCES
SYMBOL
PARAMETER
R
th j-hs
Thermal resistance junction to
heatsink
R
th j-a
Thermal resistance junction to
ambient
CONDITIONS
with heatsink compound
without heatsink compound
in free air
MIN.
-
-
-
TYP.
-
-
55
MAX.
5.7
6.7
-
UNIT
K/W
K/W
K/W
ELECTRICAL CHARACTERISTICS
characteristics are per diode at T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
V
F
Forward voltage
CONDITIONS
I
F
= 5 A; T
j
= 150C
I
F
= 5 A
I
F
= 10 A
V
R
= V
RWM
; T
j
= 100 C
V
= V
I
F
= 2 A; V
R
≥
30 V; -dI
F
/dt = 20 A/
μ
s
I
= 1 A; V
≥
30 V;
-dI
/dt = 100 A/
μ
s
I
F
= 0.5 A to I
= 1 A; I
rec
= 0.25 A
I
F
= 5 A; V
R
≥
30 V; -dI
F
/dt = 50 A/
μ
s
I
F
= 1 A; dI
F
/dt = 10 A/
μ
s
MIN.
-
-
-
-
-
-
-
TYP.
0.80
0.95
1.10
0.1
2
4
15
MAX.
0.895
1.10
1.25
0.2
10
9
25
UNIT
V
V
V
mA
μ
A
nC
ns
I
R
Reverse current
Q
s
t
rr1
Reverse recovery charge
Reverse recovery time
t
rr2
I
rrm
V
fr
Reverse recovery time
Peak reverse recovery current
Forward recovery voltage
-
-
-
10
0.5
1
20
0.7
-
ns
A
V
October 1998
2
Rev 1.300
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