參數(shù)資料
型號: BYQ28-100
廠商: NXP SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: Rectifier diodes ultrafast
中文描述: 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB
文件頁數(shù): 1/6頁
文件大小: 46K
代理商: BYQ28-100
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
BYQ28X series
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glass
rectifier diodes in a full pack plastic
envelope,
featuring
voltage
drop,
ultra-fast
times
and
characteristic. They are intended for
usein switchedmodepower supplies
andhighfrequencycircuitsin general
where low conduction and switching
losses are essential.
passivated
dual
epitaxial
SYMBOL
PARAMETER
MAX.
MAX.
MAX.
UNIT
low
forward
recovery
recovery
BYQ28X-
100
100
150
150
200
200
V
RRM
Repetitive peak reverse
voltage
Forward voltage
Output current (both
diodes conducting)
Reverse recovery time
V
soft
V
F
I
O(AV)
0.895
10
0.895
10
0.895
10
V
A
t
rr
25
25
25
ns
PINNING - SOT186A
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
anode 1 (a)
2
cathode (k)
3
anode 2 (a)
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
-150
150
150
150
10
UNIT
-100
100
100
100
-200
200
200
200
V
RRM
V
RWM
V
R
I
O(AV)
Repetitive peak reverse voltage
Crest working reverse voltage
Continuous reverse voltage
1
Output current (both diodes
conducting)
2
-
-
-
-
V
V
V
A
square wave
δ
= 0.5; T
hs
92 C
sinusoidal
a = 1.57; T
hs
95 C
-
9
A
I
O(RMS)
I
FRM
RMS forward current
Repetitive peak forward current t = 25
μ
s;
δ
= 0.5;
per diode
Non-repetitive peak forward
current per diode
-
-
14
10
A
A
T
92 C
t = 10 ms
t = 8.3 ms
sinusoidal; with reapplied
V
t = 10 ms
I
FSM
-
-
50
55
A
A
I
2
t
T
stg
T
j
I
2
t for fusing
Storage temperature
Operating junction temperature
-
12.5
150
150
A
2
s
C
C
-40
-
1 2 3
case
k
a1
1
a2
3
2
1
T
hs
148C for thermal stability.
2
Neglecting switching and reverse current losses
August 1996
1
Rev 1.000
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