參數(shù)資料
型號: BYM63
廠商: NXP SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: Ripple blocking diode
中文描述: 1 A, 300 V, SILICON, SIGNAL DIODE
封裝: HERMETIC SEALED, GLASS PACKAGE-2
文件頁數(shù): 3/7頁
文件大小: 82K
代理商: BYM63
1996 Jun 10
3
Philips Semiconductors
Product specification
Ripple blocking diode
BYM63
ELECTRICAL CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1.
Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer
40
μ
m, see Fig.8.
For more information please refer to the
‘General Part of Handbook SC01.’
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
F
forward voltage
I
F
= 2 A; T
j
= T
j max
; see Fig.5
I
F
= 2 A; see Fig.5
V
R
= V
RRMmax
;
see Fig.6
V
R
= V
RRMmax
; T
j
= 165
°
C;
see Fig.6
when switched to I
F
= 5 A
in 50 ns; see Fig.9
when switched from V
F
= 0 V to
V
F
= 3 V; measured between
10% and 90% of I
F max
;
see Fig.11
when switched from I
F
= 0.5 A to
I
R
= 1 A; measured at
I
R
= 0.25 A; see Fig.11
f = 1 MHz; V
R
= 0 V; see Fig.7
1.34
2.30
10
V
V
μ
A
I
R
reverse current
150
μ
A
t
fr
forward recovery time
1.5
μ
s
t
on
turn-on time
400
ns
t
rr
reverse recovery time
150
ns
C
d
diode capacitance
65
pF
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-tp
R
th j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
lead length = 10 mm
note 1
25
75
K/W
K/W
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