參數(shù)資料
型號： BYM63
廠商： NXP SEMICONDUCTORS
元件分類： 參考電壓二極管
英文描述： Ripple blocking diode
中文描述： 1 A, 300 V, SILICON, SIGNAL DIODE
封裝： HERMETIC SEALED, GLASS PACKAGE-2
文件頁數(shù)： 2/7頁
文件大?。?/td> 82K
代理商： BYM63
1996 Jun 10
2
Philips Semiconductors
Product specification
Ripple blocking diode
BYM63
FEATURES
Glass passivated
High maximum operating
temperature
Low leakage current
Excellent stability
Guaranteed minimum turn-on time
for absorbing forward current
transients and oscillations
Specially designed as rectifier in
the auxiliary power supply in e.g.
switched mode power supplies
Available in ammo-pack.
Also available with preformed leads
for easy insertion.
DESCRIPTION
Rugged glass SOD64 package, using
a high temperature alloyed
construction.
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
Fig.1 Simplified outline (SOD64) and symbol.
2/3 page (Datasheet)
MAM104
a
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
RRM
V
R
I
F(AV)
repetitive peak reverse voltage
continuous reverse voltage
average forward current
300
300
2.4
V
V
A
averaged over any 20 ms period;
T
tp
= 55
°
C; lead length = 10 mm;
see Fig.2; see also Fig.4
averaged over any 20 ms period;
T
amb
= 65
°
C;
PCB mounting (Fig.8);
see Fig.3; see also Fig.4
T
tp
= 55
°
C
T
amb
= 65
°
C
t = 10 ms half sine wave;
T
j
= T
j max
prior to surge;
V
R
= V
RRMmax
1.0
A
I
FRM
repetitive peak forward current
21
8.5
45
A
A
A
I
FSM
non-repetitive peak forward current
T
stg
T
j
storage temperature
junction temperature
65
65
+175
+175
°
C
°
C
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