參數(shù)資料
型號： BYG85B
廠商： NXP SEMICONDUCTORS
元件分類： 參考電壓二極管
英文描述： Fast soft-recovery rectifier(快速軟恢復(fù)整流器)
中文描述： 0.98 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC
封裝： PLASTIC PACKAGE-2
文件頁數(shù)： 3/12頁
文件大?。?/td> 66K
代理商： BYG85B
1998 Nov 25
3
Philips Semiconductors
Product specification
Fast soft-recovery rectifier
BYG85B
ELECTRICAL CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
THERMAL CHARACTERISTICS
Notes
1.
2.
Device mounted on Al
2
O
3
printed-circuit board, 0.7 mm thick; thickness of copper
≥
35
μ
m, see Fig.11.
Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper
≥
40
μ
m, see Fig.11.
For more information please refer to the ‘General Part of associated Handbook’
SYMBOL
PARAMETER
CONDITIONS
MIN.
120
TYP.
MAX.
UNIT
V
F
forward voltage
I
F
= 2 A; T
j
= T
j max
; see Fig.8
I
F
= 2 A; see Fig.8
I
R
= 0.1 mA
0.78
0.98
V
V
V
V
(BR)R
reverse avalanche
breakdown voltage
reverse current
I
R
V
R
= V
RRMmax
; see Fig.9
V
R
= V
RRMmax
; T
j
= 165
°
C;
see Fig.9
when switched from I
F
= 0.5 A to
I
R
= 1 A; measured at I
R
= 0.25 A;
see Fig.13
f = 1 MHz; V
R
= 0; see Fig.10
when switched from I
F
= 1 A to
V
R
≥
30 V and dI
F
/dt =
1 A/
μ
s;
see Fig.12
5
μ
A
μ
A
150
t
rr
reverse recovery time
12.5
ns
C
d
dI
R
dt
diode capacitance
maximum slope of reverse
recovery current
110
pF
A/
μ
s
2
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-tp
R
th j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
25
K/W
K/W
K/W
note 1
note 2
100
150
--------
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