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參數(shù)資料
| 型號(hào)： | BYG85B |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Fast soft-recovery rectifier(快速軟恢復(fù)整流器) |
| 中文描述： | 0.98 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC |
| 封裝： | PLASTIC PACKAGE-2 |
| 文件頁數(shù)： | 2/12頁 |
| 文件大?。?/td> | 66K |
| 代理商： | BYG85B |
1998 Nov 25
2
Philips Semiconductors
Product specification
Fast soft-recovery rectifier
BYG85B
FEATURES
Glass passivated
High maximum operating
temperature
Low leakage current
Excellent stability
UL 94V-O classified plastic
package
Shipped in 12 mm embossed tape.
DESCRIPTION
DO-214AC surface mountable
package with glass passivated chip.
The well-defined void-free case is of a
transfer-moulded thermo-setting
plastic.
Fig.1 Simplified outline (DO-214AC; SOD106) and symbol.
handbook, 4 columns
MSA474
Top view
Side view
cathode
band
k
a
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
RRM
V
R
I
F(AV)
repetitive peak reverse voltage
continuous reverse voltage
average forward current
100
100
2.5
V
V
A
T
tp
= 100
°
C; averaged over any
20 ms period; see Figs 2 and 7
T
amb
= 60
°
C; AL
2
O
3
PCB mounting
(see Fig.11); averaged over any
20 ms period; see Fig.3
T
amb
= 60
°
C; epoxy PCB mounting
(see Fig.11); averaged over any
20 ms period; see Fig.3
T
tp
= 100
°
C; see Fig.3
T
amb
= 60
°
C; AL
2
O
3
PCB mounting;
see Fig.5
T
amb
= 60
°
C; epoxy PCB mounting;
see Fig.6
t = 10 ms half sine wave; T
j
= T
j max
prior to surge; V
R
= V
RRMmax
I
F(AV)
average forward current
1.3
A
I
F(AV)
average forward current
0.98
A
I
FRM
I
FRM
repetitive peak forward current
repetitive peak forward current
23
12
A
A
I
FRM
repetitive peak forward current
8.5
A
I
FSM
non-repetitive peak forward current
35
A
T
stg
T
j
storage temperature
junction temperature
65
65
+175
+175
°
C
°
C
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