參數(shù)資料
型號(hào): BYD67
廠商: NXP SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: Ripple blocking diode(紋波阻塞二極管)
中文描述: 0.4 A, 300 V, SILICON, SIGNAL DIODE
封裝: HERMETIC SEALED, GLASS PACKAGE-2
文件頁數(shù): 4/8頁
文件大小: 59K
代理商: BYD67
1999 Oct 20
4
Philips Semiconductors
Product specification
Ripple blocking diode
BYD67
GRAPHICAL DATA
a = 1.42; V
R
= V
RRMmax
;
δ
= 0.5.
Switched mode application.
Fig.2
Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
handbook, halfpage
(A)
0
200
0
0.4
MGM273
0.8
1.2
1.6
40
80
120
160
Ttp (
°
C)
a = 1.42; V
R
= V
RRMmax
;
δ
= 0.5.
Device mounted as shown in Fig.8.
Switched mode application.
Fig.3
Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
handbook, halfpage
0
0.4
0.2
0
200
40
80
120
160
MGM272
IF(AV)
(A)
Tamb (
°
C)
a = I
F(RMS)
/I
F(AV)
; V
R
= V
RRMmax
;
δ
= 0.5.
Fig.4
Maximumsteadystatepowerdissipation
(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.
handbook, halfpage
P
(W)
0
2
0
1
MGM271
2
3
4
0.8
1.2
1.6
0.4
IF(AV) (A)
1.42
a = 3 2.5 2
1.57
Dotted line: T
j
= 175
°
C.
Solid line: T
j
= 25
°
C.
Fig.5
Forward current as a function of forward
voltage; maximum values.
handbook, halfpage
0
5
4
0
2
4
MLC301
2
3
1
IF
(A)
VF
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