參數(shù)資料
型號(hào)： BYD67
廠商： NXP SEMICONDUCTORS
元件分類： 參考電壓二極管
英文描述： Ripple blocking diode(紋波阻塞二極管)
中文描述： 0.4 A, 300 V, SILICON, SIGNAL DIODE
封裝： HERMETIC SEALED, GLASS PACKAGE-2
文件頁(yè)數(shù)： 3/8頁(yè)
文件大小： 59K
代理商： BYD67
1999 Oct 20
3
Philips Semiconductors
Product specification
Ripple blocking diode
BYD67
ELECTRICAL CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1.
Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer
≥
40
μ
m, see Fig.8.
For more information please refer to the ‘General Part of associated Handbook.’
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
F
forward voltage
I
F
= 1 A; T
j
= T
j max
; see Fig.5
I
F
= 1 A; see Fig.5
V
R
= V
RRMmax
;
see Fig.6
V
R
= V
RRMmax
; T
j
= 165
°
C;
see Fig.6
when switched to I
F
= 1 A
in 50 ns; see Fig.9
when switched from V
F
= 0 to
V
F
= 3 V; measured between
10% and 90% of I
Fmax
;
see Fig.11
when switched from I
F
= 0.5 A to
I
R
= 1 A; measured at
I
R
= 0.25 A; see Fig.11
f = 1 MHz; V
R
= 0; see Fig.7
1.7
2.3
1
V
V
μ
A
I
R
reverse current
100
μ
A
t
fr
forward recovery time
350
ns
t
on
turn-on time
500
ns
t
rr
reverse recovery time
150
ns
C
d
diode capacitance
17
pF
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-tp
R
th j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
30
K/W
K/W
note 1
150
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