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參數(shù)資料
| 型號： | BYD63 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Ripple blocking diode(紋波阻塞二極管) |
| 中文描述： | 0.45 A, 300 V, SILICON, SIGNAL DIODE |
| 封裝： | HERMETIC SEALED, GLASS PACKAGE-2 |
| 文件頁數(shù)： | 4/7頁 |
| 文件大小： | 77K |
| 代理商： | BYD63 |
1996 Jun 10
4
Philips Semiconductors
Product specification
Ripple blocking diode
BYD63
GRAPHICAL DATA
a = 1.42; V
R
= V
RRMmax
;
δ
= 0.5.
Switched mode application.
Fig.2
Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
handbook, halfpage
IF(AV)
(A)
0
200
0
MLC303
0.4
100
Ttp( C)
0.8
1.2
lead length 10 mm
a = 1.42; V
R
= V
RRMmax
;
δ
= 0.5.
Device mounted as shown in Fig.8.
Switched mode application.
Fig.3
Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
handbook, halfpage
IF(AV)
(A)
0
200
0
0.2
0.6
MLC304
100
Tamb
o
0.4
a = I
F(RMS)
/I
F(AV)
; V
R
= V
RRMmax
;
δ
= 0.5.
Fig.4
Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.
handbook, halfpage
0
MLC302
0
2
1
a = 3 2.5
2
P
(W)
IF(AV)
0.5
1.0
1.57
1.42
Dotted line: T
j
= 175
°
C.
Solid line: T
j
= 25
°
C.
Fig.5
Forward current as a function of forward
voltage; maximum values.
handbook, halfpage
0
5
4
0
2
4
MLC301
2
3
1
IF
(A)
VF
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