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參數(shù)資料
| 型號： | BYD63 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Ripple blocking diode(紋波阻塞二極管) |
| 中文描述： | 0.45 A, 300 V, SILICON, SIGNAL DIODE |
| 封裝： | HERMETIC SEALED, GLASS PACKAGE-2 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 77K |
| 代理商： | BYD63 |
1996 Jun 10
2
Philips Semiconductors
Product specification
Ripple blocking diode
BYD63
FEATURES
Glass passivated
High maximum operating
temperature
Low leakage current
Excellent stability
Guaranteed minimum turn-on time
for absorbing forward current
transients and oscillations
Specially designed as rectifier in
the auxiliary power supply in e.g.
switched mode power supplies
Available in ammo-pack.
DESCRIPTION
Cavity free cylindrical glass package
through Implotec
(1)
technology.
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
(1) Implotec is a trademark of Philips.
Fig.1 Simplified outline (SOD81) and symbol.
handbook, 4 columns
a
k
MAM123
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
RRM
V
R
I
F(AV)
repetitive peak reverse voltage
continuous reverse voltage
average forward current
300
300
0.85
V
V
A
averaged over any 20 ms period;
T
tp
= 55
°
C; lead length = 10 mm;
see Fig.2; see also Fig.4
averaged over any 20 ms period;
T
amb
= 65
°
C;
PCB mounting (Fig.8);
see Fig.3; see also Fig.4
T
tp
= 55
°
C
T
amb
= 65
°
C
t = 10 ms half sine wave;
T
j
= T
j max
prior to surge;
V
R
= V
RRMmax
0.45
A
I
FRM
repetitive peak forward current
8.25
4.45
5
A
A
A
I
FSM
non-repetitive peak forward current
T
stg
T
j
storage temperature
junction temperature
65
65
+175
+175
°
C
°
C
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