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參數(shù)資料
| 型號： | BY614 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Miniature high-voltage soft-recovery rectifier |
| 中文描述： | 0.05 A, 2200 V, SILICON, SIGNAL DIODE |
| 封裝： | HERMETIC SEALED, GLASS, SOD-61H2, 2 PIN |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 30K |
| 代理商： | BY614 |
1996 Sep 26
3
Philips Semiconductors
Product specification
Miniature high-voltage soft-recovery
rectifier
BY614
ELECTRICAL CHARACTERISTICS
T
j
= 25
°
C; unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1.
Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper
≥
40
μ
m, see Fig.5.
For more information please refer to the “General Part of associated Handbook”
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
F
I
R
Q
r
forward voltage
reverse current
recovery charge
I
F
= 50 mA; T
j
= T
j max
; see Fig.4
V
R
= V
RWmax
; T
j
= 120
°
C
when switched from I
F
= 100 mA to
V
R
≥
100 V and dI
F
/dt =
200 mA/
μ
s;
see Fig.6
when switched from I
F
= 100 mA to
V
R
≥
100 V and dI
F
/dt =
200 mA/
μ
s;
see Fig.6
when switched from I
F
= 100 mA to
V
R
≥
100 V and dI
F
/dt =
200 mA/
μ
s;
see Fig.6
V
R
= 0 V; f = 1 MHz
6
3
1
V
μ
A
nC
t
f
fall time
100
ns
t
rr
reverse recovery time
300
ns
C
d
diode capacitance
2
pF
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-tp
R
th j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
lead length = 10 mm
note 1
100
155
K/W
K/W
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