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參數(shù)資料
| 型號： | BY614 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Miniature high-voltage soft-recovery rectifier |
| 中文描述： | 0.05 A, 2200 V, SILICON, SIGNAL DIODE |
| 封裝： | HERMETIC SEALED, GLASS, SOD-61H2, 2 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 30K |
| 代理商： | BY614 |
1996 Sep 26
2
Philips Semiconductors
Product specification
Miniature high-voltage soft-recovery
rectifier
BY614
FEATURES
Glass passivated
High maximum operating
temperature
Low leakage current
Excellent stability
Soft-recovery switching
characteristics
Very compact construction.
APPLICATIONS
Miniature high-voltage assemblies
such as voltage multipliers.
DESCRIPTION
Miniature glass package, using a high
temperature alloyed construction.
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
The package is designed to be used
in an insulating medium such as
resin, oil or SF6 gas.
Fig.1 Simplified outline (SOD61H2) and symbol.
The cathode lead is marked with a black band.
handbook, halfpage
MAM162
a
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
RSM
V
RRM
V
RW
V
R
I
F(AV)
non-repetitive peak reverse voltage
repetitive peak reverse voltage
working reverse voltage
continuous reverse voltage
average forward current
2200
2200
2000
2000
V
V
V
V
mA
averaged over any 20 ms period;
PCB mounting (see Fig.5);
T
amb
= 65
°
C; see Fig.2;
see also Fig.3
50
I
FRM
I
FSM
repetitive peak forward current
non-repetitive peak forward current
500
mA
A
t
≤
10 ms; half sinewave;
T
j
= T
j max
prior to surge;
V
R
= V
RWmax
1
T
stg
T
j
storage temperature
junction temperature
65
65
+150
+150
°
C
°
C
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