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參數(shù)資料
| 型號： | BUZ907DP |
| 英文描述： | P-Channel Power MOSFET For Audio Application(P溝道功率型MOS場效應(yīng)管(用于音頻電路)) |
| 中文描述： | P溝道功率MOSFET為音頻應(yīng)用性（P溝道功率型馬鞍山場效應(yīng)管（用于音頻電路）） |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 24K |
| 代理商： | BUZ907DP |
MAGNA
Magnatec.
Telephone (01455) 554711. Fax (01455) 558843
Prelim. 01/97
BUZ907DP
BUZ908DP
V
DSX
V
GSS
I
D
I
D(PK)
P
D
T
stg
T
j
R
θ
JC
Drain – Source Voltage
Gate – Source Voltage
Continuous Drain Current
Body Drain Diode
Total Power Dissipation
Storage Temperature Range
Maximum Operating Junction Temperature
Thermal Resistance Junction – Case
@ T
case
= 25°C
±14V
-16A
-16A
250W
–55 to 150°C
150°C
0.5°C/W
MECHANICAL DATA
Dimensions in mm
1
2
3
0.6
2.8
5.0
20.0
5.45
5.45
1.2
2.0
3.4
2.0
1.0
3.3 Dia.
P–CHANNEL
POWER MOSFET
FEATURES
HIGH SPEED SWITCHING
SEMEFAB DESIGNED AND DIFFUSED
HIGH VOLTAGE (220V & 250V)
HIGH ENERGY RATING
ENHANCEMENT MODE
INTEGRAL PROTECTION DIODES
COMPLIMENTARY N–CHANNEL
BUZ902DP & BUZ903DP
Pin 1 – Gate
TO-3PBL
Pin 2 – Source
Case – Source
Pin 3 – Drain
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
POWER MOSFETS FOR
AUDIO APPLICATIONS
BUZ907DP
-220V
BUZ908DP
-250V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BUZ908DP | P-Channel Power MOSFET For Audio Application(P溝道功率型MOS場效應(yīng)管(用于音頻電路)) |
| BUZ907D | P-Channel Power MOSFET For Audio Application(P溝道功率型MOS場效應(yīng)管(用于音頻電路)) |
| BUZ908D | P-Channel Power MOSFET For Audio Application(P溝道功率型MOS場效應(yīng)管(用于音頻電路)) |
| BUZ907P | P-Channel Power MOSFET For Audio Application(P溝道功率型MOS場效應(yīng)管(用于音頻電路)) |
| BUZ908P | P-Channel Power MOSFET For Audio Application(P溝道功率型MOS場效應(yīng)管(用于音頻電路)) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUZ907P | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:POWER MOSFETS FOR AUDIO APPLICATIONS |
| BUZ908 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:POWER MOSFETS FOR AUDIO APPLICATIONS |
| BUZ908D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:P-CHANNEL POWER MOSFET |
| BUZ908P | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:POWER MOSFETS FOR AUDIO APPLICATIONS |
| BUZ90A | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) |
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