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參數(shù)資料
| 型號： | BUZ900P |
| 英文描述： | N-Channel Power MOSFET For Audio Application(N溝道功率型MOS場效應(yīng)管(用于音頻電路)) |
| 中文描述： | N溝道功率MOSFET為音頻應(yīng)用（不適用馬鞍山溝道功率型場效應(yīng)管（用于音頻電路）） |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 38K |
| 代理商： | BUZ900P |
MAGNA
Magnatec.
Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612.
Prelim. 10/94
BUZ900P
BUZ901P
V
DSX
V
GSS
I
D
I
D(PK)
P
D
T
stg
T
j
R
θ
JC
Drain – Source Voltage
Gate – Source Voltage
Continuous Drain Current
Body Drain Diode
Total Power Dissipation
Storage Temperature Range
Maximum Operating Junction Temperature
Thermal Resistance Junction – Case
@ T
case
= 25°C
±14V
8A
8A
125W
–55 to 150°C
150°C
1.0°C/W
MECHANICAL DATA
Dimensions in mm (inches)
1
3
2
3.55 (0.140)
3.81 (0.150)
0.40 (0.016)
0.79 (0.031)
2.21 (0.087)
2.59 (0.102)
1.01 (0.040)
1.40 (0.055)
15.49 (0.610)
16.26 (0.640)
4.69 (0.185)
5.31 (0.209)
1.49 (0.059)
2.49 (0.098)
2
2
6
(
B
1
2
4
(
M
1.65 (0.065)
2.13 (0.084)
5.25 (0.215)
BSC
2.87 (0.113)
3.12 (0.123)
N–CHANNEL
POWER MOSFET
FEATURES
HIGH SPEED SWITCHING
N–CHANNEL POWER MOSFET
SEMEFAB DESIGNED AND DIFFUSED
HIGH VOLTAGE (160V & 200V)
HIGH ENERGY RATING
ENHANCEMENT MODE
INTEGRAL PROTECTION DIODE
P–CHANNEL ALSO AVAILABLE AS
BUZ905P & BUZ906P
Pin 1 – Gate
TO–247
Pin 2 – Source
Pin 3 – Drain
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
POWER MOSFETS FOR
AUDIO APPLICATIONS
BUZ900P
160V
BUZ901P
200V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BUZ901P | N-Channel Power MOSFET For Audio Application(N溝道功率型MOS場效應(yīng)管(用于音頻電路)) |
| BUZ900 | N-Channel Power MOSFET For Audio Application(N溝道功率型MOS場效應(yīng)管(用于音頻電路)) |
| BUZ901 | N-Channel Power MOSFET For Audio Application(N溝道功率型MOS場效應(yīng)管(用于音頻電路)) |
| BUZ901DP | N-Channel Power MOSFET For Audio Application(N溝道功率型MOS場效應(yīng)管(用于音頻電路)) |
| BUZ900DP | N-Channel Power MOSFET For Audio Application(N溝道功率型MOS場效應(yīng)管(用于音頻電路)) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUZ900P | 制造商:TT Electronics/ Semelab 功能描述:MOSFET N TO-247 |
| BUZ900X4S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NEW PRODUCT UNDER DEVELOPMENT |
| BUZ901 | 制造商:TT Electronics/ Semelab 功能描述:MOSFET N TO-3 制造商:TT Electronics/ Semelab 功能描述:MOSFET, N, TO-3 制造商:SEMELAB 功能描述:N CHANNEL MOSFET, 200V, 8A, TO-3; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:200V; On Resistance Rds(on):1.5ohm; Threshold Voltage Vgs Typ:1.5V; Power Dissipation Pd:125W; No. of Pins:2 ;RoHS Compliant: Yes 制造商:TT Electronics / Semelab 功能描述:MOSFET N-Channel 200V 8A TO-3 |
| BUZ901 | 制造商:TT Electronics/ Semelab 功能描述:MOSFET N TO-3 |
| BUZ901CDP | 制造商:TT Electronics / Semelab 功能描述:MOSFET N-Channel 200V 16A TO-264 |
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