參數(shù)資料
型號: BUZ901DP
英文描述: N-Channel Power MOSFET For Audio Application(N溝道功率型MOS場效應(yīng)管(用于音頻電路))
中文描述: N溝道功率MOSFET為音頻應(yīng)用(不適用馬鞍山溝道功率型場效應(yīng)管(用于音頻電路))
文件頁數(shù): 1/4頁
文件大小: 39K
代理商: BUZ901DP
MAGNA
Magnatec.
Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612.
Prelim. 2/95
BUZ900DP
BUZ901DP
V
DSX
V
GSS
I
D
I
D(PK)
P
D
T
stg
T
j
R
θ
JC
Drain – Source Voltage
Gate – Source Voltage
Continuous Drain Current
Body Drain Diode
Total Power Dissipation
Storage Temperature Range
Maximum Operating Junction Temperature
Thermal Resistance Junction – Case
@ T
case
= 25°C
±14V
16A
16A
250W
–55 to 150°C
150°C
0.5°C/W
MECHANICAL DATA
Dimensions in mm
1
2
3
0.6
2.8
5.0
20.0
5.45
5.45
1.2
2.0
3.4
2.0
1.0
3.3 Dia.
N–CHANNEL
POWER MOSFET
FEATURES
HIGH SPEED SWITCHING
N–CHANNEL POWER MOSFET
SEMEFAB DESIGNED AND DIFFUSED
HIGH VOLTAGE (160V & 200V)
HIGH ENERGY RATING
ENHANCEMENT MODE
INTEGRAL PROTECTION DIODE
P–CHANNEL ALSO AVAILABLE AS
BUZ905DP & BUZ906DP
DOUBLE DIE PACKAGE FOR MAXIMUM
POWER AND HEATSINK SPACE
TO–3PBL
Pin 2 – Source
Case is Source
Pin 1 – Gate
Pin 3 – Drain
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
POWER MOSFETS FOR
AUDIO APPLICATIONS
BUZ900DP
160V
BUZ901DP
200V
相關(guān)PDF資料
PDF描述
BUZ900DP N-Channel Power MOSFET For Audio Application(N溝道功率型MOS場效應(yīng)管(用于音頻電路))
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