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參數(shù)資料
| 型號(hào)： | BUW13AW |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon diffused power transistors |
| 中文描述： | 15 A, 450 V, NPN, Si, POWER TRANSISTOR, TO-247 |
| 封裝： | PLASTIC, TO-247, 3 PIN |
| 文件頁(yè)數(shù)： | 4/12頁(yè) |
| 文件大?。?/td> | 79K |
| 代理商： | BUW13AW |
1997 Aug 13
3
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUW13W; BUW13AW
Note
1.
Measured with a half-sinewave voltage (curve tracer).
Switching times resistive load
(see Figs 11 and 12)
t
on
turn-on time
BUW13W
BUW13AW
storage time
BUW13W
BUW13AW
fall time
BUW13W
BUW13AW
I
Con
= 10 A; I
Bon
=
I
Boff
= 2 A
I
Con
= 8 A; I
Bon
=
I
Boff
= 1.6 A
1
1
μ
s
μ
s
t
s
I
Con
= 10 A; I
Bon
=
I
Boff
= 2 A
I
Con
= 8 A; I
Bon
=
I
Boff
= 1.6 A
4
4
μ
s
μ
s
t
f
I
Con
= 10 A; I
Bon
=
I
Boff
= 2 A
I
Con
= 8 A; I
Bon
=
I
Boff
= 1.6 A
0.8
0.8
μ
s
μ
s
Switching times inductive load
(see Figs 13 and 14)
t
s
storage time
BUW13W
I
Con
= 10 A; I
B
= 2 A
I
Con
= 10 A; I
B
= 2 A; T
j
= 100
°
C
I
Con
= 8 A; I
B
= 1.6 A
I
Con
= 8 A; I
B
= 1.6 A;
T
j
= 100
°
C
2.3
2.5
2.3
2.5
3
3.2
3
3.2
μ
s
μ
s
μ
s
μ
s
BUW13AW
t
f
fall time
BUW13W
I
Con
= 10 A; I
B
= 2 A
I
Con
= 10 A; I
B
= 2 A; T
j
= 100
°
C
I
Con
= 8 A; I
B
= 1.6 A
I
Con
= 8 A; I
B
= 1.6 A;
T
j
= 100
°
C
80
140
80
140
150
300
150
300
ns
ns
ns
ns
BUW13AW
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
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