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參數(shù)資料
| 型號(hào)： | BUW13AW |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon diffused power transistors |
| 中文描述： | 15 A, 450 V, NPN, Si, POWER TRANSISTOR, TO-247 |
| 封裝： | PLASTIC, TO-247, 3 PIN |
| 文件頁(yè)數(shù)： | 2/12頁(yè) |
| 文件大?。?/td> | 79K |
| 代理商： | BUW13AW |
1997 Aug 13
1
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUW13W; BUW13AW
DESCRIPTION
High-voltage, high-speed,
glass-passivated NPN power
transistor in a SOT429 package.
APPLICATIONS
Converters
Inverters
Switching regulators
Motor control systems.
PINNING
PIN
DESCRIPTION
1
2
base
collector; connected to
mounting base
emitter
3
Fig.1 Simplified outline (SOT429) and symbol.
ge
MBK117
1
2
3
3
2
1
MBB008
QUICK REFERENCE DATA
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
V
CESM
collector-emitter peak voltage
BUW13W
BUW13AW
collector-emitter voltage
BUW13W
BUW13AW
collector-emitter saturation voltage
collector current (DC)
collector current (peak value)
total power dissipation
fall time
V
BE
= 0
850
1000
V
V
V
CEO
open base
400
450
1.5
15
30
175
0.8
V
V
V
A
A
W
μ
s
V
CEsat
I
C
I
CM
P
tot
t
f
see Figs 7 and 9
see Figs 2 and 4
see Fig 2
T
mb
≤
25
°
C; see Fig.3
resistive load; see Figs 11 and 12
SYMBOL
PARAMETER
VALUE
UNIT
R
th j-mb
thermal resistance from junction to mounting base
0.7
K/W
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUW13F | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon diffused power transistors |
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| BUW14 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
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