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參數(shù)資料
| 型號： | BUT18 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon diffused power transistors |
| 中文描述： | 6 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | PLASTIC, TO-220AB, 3 PIN |
| 文件頁數(shù)： | 3/12頁 |
| 文件大?。?/td> | 67K |
| 代理商： | BUT18 |
1999 Jun 11
3
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUT18; BUT18A
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
Note
1.
Measured with a half-sinewave voltage (curve tracer).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CESM
collector-emitter peak voltage
BUT18
BUT18A
collector-emitter voltage
BUT18
BUT18A
collector saturation current
collector current (DC)
collector current (peak value)
base current (DC)
base current (peak value)
total power dissipation
storage temperature
junction temperature
V
BE
= 0
850
1000
V
V
V
CEO
open base
65
400
450
4
6
12
3
6
110
+150
150
V
V
A
A
A
A
A
W
°
C
°
C
I
Csat
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
j
see Fig.2
see Fig.2
T
mb
≤
25
°
C; see Fig.4
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
CEOsust
collector-emitter sustaining
voltage
BUT18
BUT18A
collector-emitter saturation voltage I
C
= 4 A; I
B
= 0.8 A; see Fig.7
base-emitter saturation voltage
collector-emitter cut-off current
I
C
= 0.1 A; I
Boff
= 0; L = 25 mH; see
Figs 5 and 6
400
450
1.5
1.3
1
2
V
V
V
V
mA
mA
V
CEsat
V
BEsat
I
CES
I
C
= 4 A; I
B
= 0.8 A; see Fig.8
V
CE
= V
CESMmax
; V
BE
= 0; note 1
V
CE
= V
CESMmax
; V
BE
= 0;
T
j
= 125
°
C; note 1
V
EB
= 9 V; I
C
= 0
V
CE
= 5 V; I
C
= 10 mA; see Fig.9
V
CE
= 5 V; I
C
= 1 A; see Fig.9
I
EBO
h
FE
emitter-base cut-off current
DC current gain
10
10
18
20
10
35
35
mA
Switching times resistive load
(see Figs 10 and 11)
t
on
t
s
t
f
turn-on time
storage time
fall time
I
Con
= 4 A; I
Bon
=
I
Boff
= 800 mA
I
Con
= 4 A; I
Bon
=
I
Boff
= 800 mA
I
Con
= 4 A; I
Bon
=
I
Boff
= 800 mA
1
4
0.8
μ
s
μ
s
μ
s
Switching times inductive load
(see Figs 10 and 13)
t
s
t
f
storage time
fall time
I
Con
= 4 A; I
Bon
= 800 mA; V
CL
= 250 V
I
Con
= 4 A; I
Bon
= 800 mA; V
CL
= 250 V
1.6
150
2.5
400
μ
s
ns
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUT18A | 制造商:SAVANTIC 制造商全稱:Savantic, Inc. 功能描述:Silicon NPN Power Transistors |
| BUT18A,127 | 功能描述:兩極晶體管 - BJT BUT18A/SOT78/RAILH// RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BUT18AF | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:Silicon NPN Power Transistors |
| BUT18AF/B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR ISOLATED SOT-186 |
| BUT18F | 制造商:SAVANTIC 制造商全稱:Savantic, Inc. 功能描述:Silicon NPN Power Transistors |
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