參數(shù)資料
型號(hào): BUT12F
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: Silicon diffused power transistors
中文描述: 8 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220
封裝: PLASTIC PACKAGE-3
文件頁(yè)數(shù): 5/12頁(yè)
文件大?。?/td> 78K
代理商: BUT12F
1997 Aug 13
4
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUT12F; BUT12AF
Fig.2 Forward bias SOAR.
T
mb
< 25
°
C.
I - Region of permissible DC operation.
II - Permissible extension for repetitive pulse operation.
handbook, full pagewidth
MGB935
1
10
1
10
2
10
3
10
4
I
VCE (V)
10
10
1
10
2
10
2
10
4
10
3
IC
(A)
ICM max
IC max
II
BUT12F
BUT12AF
DC
相關(guān)PDF資料
PDF描述
BUT12AF Silicon diffused power transistors
BUT12AF SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION)
BUT14 8-bit MCU for automotive with 16 to 60 Kbyte Flash, ADC, CSS, 5 timers, SPI, SCI, I2C interface
BUT15 8-bit MCU for automotive with 16 to 60 Kbyte Flash, ADC, CSS, 5 timers, SPI, SCI, I2C interface
BUT230F 8-bit MCU for automotive with 16 to 60 Kbyte Flash, ADC, CSS, 5 timers, SPI, SCI, I2C interface
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