參數(shù)資料
型號(hào)： BUT12AF
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： Silicon diffused power transistors
中文描述： 8 A, 450 V, NPN, Si, POWER TRANSISTOR, TO-220
封裝： PLASTIC PACKAGE-3
文件頁數(shù)： 12/12頁
文件大?。?/td> 78K
代理商： BUT12AF
Internet:
http://www.semiconductors.philips.com
Philips Semiconductors – a worldwide company
Philips Electronics N.V. 1997
SCA55
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Printed in The Netherlands
137067/00/01/pp11
Date of release: 1997 Aug 13
Document order number:
9397 750 02715
相關(guān)PDF資料
PDF描述
BUT12AF SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION)
BUT14 8-bit MCU for automotive with 16 to 60 Kbyte Flash, ADC, CSS, 5 timers, SPI, SCI, I2C interface
BUT15 8-bit MCU for automotive with 16 to 60 Kbyte Flash, ADC, CSS, 5 timers, SPI, SCI, I2C interface
BUT230F 8-bit MCU for automotive with 16 to 60 Kbyte Flash, ADC, CSS, 5 timers, SPI, SCI, I2C interface
BUT230V 8-bit MCU for automotive with 16 to 60 Kbyte Flash, ADC, CSS, 5 timers, SPI, SCI, I2C interface
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BUT12AI 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor
BUT12AI,127 功能描述:兩極晶體管 - BJT BUT12AI/SOT78/RAILH// RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
BUT12ATU 功能描述:兩極晶體管 - BJT NPN Si Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
BUT12AX 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:Silicon NPN Power Transistors
BUT12AX,127 功能描述:兩極晶體管 - BJT BUT12AX/SOT186A/RAILH// RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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