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參數(shù)資料
| 型號： | BULK381D |
| 廠商： | 意法半導體 |
| 英文描述： | High Voltage Fast-Switching NPN Power Transistors(高電壓快速開關(guān)NPN功率晶體管) |
| 中文描述： | 高壓快速NPN電源開關(guān)晶體管（高電壓快速開關(guān)npn型功率晶體管） |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 78K |
| 代理商： | BULK381D |
BULK380D
BULK381D
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTORS
I
HIGH VOLTAGECAPABILITY
I
LOW SPREADOF DYNAMIC PARAMETERS
I
MINIMUMLOT-TO-LOT SPREAD FOR
RELIABLEOPERATION
I
VERYHIGH SWITCHING SPEED
I
LARGERBSOA
I
INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATIONS
I
COMPACT FLUORESCENT LAMPS(CFL)
I
ELECTRONICBALLASTSFOR
FLUORESCENT LIGHTING
DESCRIPTION
The device is manufactured using high voltage
Multi
Epitaxial
Planar
switching speeds and high voltagecapability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintainingthe wide RBSOA.
The device is designed for use in lighting
applications and low cost switch-mode power
supplies.
technology
for
high
INTERNAL SCHEMATIC DIAGRAM
September 1997
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
j
Parameter
Value
750
400
9
5
8
2
4
60
-65 to 150
150
Unit
V
V
V
A
A
A
A
W
o
C
o
C
Collector-Emitter Voltage (V
BE
= 0)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current (t
p
< 5 ms)
Base Current
Base Peak Current (t
p
< 5 ms)
Total Dissipation at T
c
= 25
o
C
Storage Temperature
Max. Operating Junction Temperature
12
3
SOT-82
1/6
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
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