參數(shù)資料
型號: BULT116D
廠商: 意法半導(dǎo)體
英文描述: MEDIUM VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
中文描述: 中壓快速開關(guān)NPN電源晶體管
文件頁數(shù): 1/6頁
文件大小: 209K
代理商: BULT116D
BULT116D
MEDIUM VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
PRELIMINARY DATA
I
INTEGRATED ANTIPARALLEL
COLLECTOR- EMITTER DIODE
I
LOW SPREAD OF DYNAMIC PARAMETERS
I
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
I
VERY HIGH SWITCHING SPEED
APPLICATIONS:
I
COMPACT FLUORESCENT LAMPS UP TO
23 W AT 110 V A.C. MAINS
I
FLYBACK AND FORWARD SINGLE
TRANSISTOR LOW POWER CONVERTERS
AT 110 V A.C. MAINS
DESCRIPTION
The device is manufactured using Multi Epitaxial
Planar technology for high switching speeds and
medium voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
The device is designed for use in lighting
applications and low cost switch-mode power
supplies.
INTERNAL SCHEMATIC DIAGRAM
February 2003
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
j
Parameter
Value
400
200
9
5
10
2
4
45
-65 to 150
150
Unit
V
V
V
A
A
A
A
W
o
C
o
C
Collector-Emitter Voltage (V
BE
= 0)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current (t
p
< 5 ms)
Base Current
Base Peak Current (t
p
< 5 ms)
Total Dissipation at T
c
= 25
o
C
Storage Temperature
Max. Operating Junction Temperature
3
21
SOT-32
1/6
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