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參數(shù)資料
| 型號(hào)： | BULD38-1 |
| 英文描述： | TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 5A I(C) | TO-251 |
| 中文描述： | 晶體管|晶體管|叩| 400V五（巴西）總裁| 5A條一（c）|至251 |
| 文件頁數(shù)： | 6/6頁 |
| 文件大小： | 108K |
| 代理商： | BULD38-1 |
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license isgranted byimplication or otherwiseunder anypatent or patentrights ofSGS-THOMSON Microelectronics.Specificationsmentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproductsarenot authorizedforuse ascriticalcomponentsinlife supportdevices or systemswithoutexpress
written approvalof SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics- All RightsReserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong -Italy -Japan - Korea - Malaysia -Malta - Morocco- The Netherlands -
Singapore -Spain - Sweden- Switzerland -Taiwan - Thailand - UnitedKingdom - U.S.A
BULD38
6/6
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| BULK128D-B | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| BULK26D | |
| BULK382 | TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 5A I(C) | SOT-82 |
| BULK38D | |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BULD39D-1 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:High Voltage Fast-Switching NPN Power Transistor |
| BULD39DT4 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:High Voltage Fast-Switching NPN Power Transistor |
| BULD3N7T4 | 功能描述:兩極晶體管 - BJT PWR BIP/S.SIGNAL RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BULD3P5T4 | 功能描述:兩極晶體管 - BJT PWR BIP/S.SIGNAL RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BULD50 | 制造商:POINN 制造商全稱:Power Innovations Ltd 功能描述:NPN SILICON TRANSISTOR WITH INTEGRATED DIODE |
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