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參數(shù)資料
| 型號(hào)： | BULD38-1 |
| 英文描述： | TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 5A I(C) | TO-251 |
| 中文描述： | 晶體管|晶體管|叩| 400V五（巴西）總裁| 5A條一（c）|至251 |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 108K |
| 代理商： | BULD38-1 |
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max
4.16
100
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
μ
A
μ
A
μ
A
I
CES
Collector Cut-off
Current (V
BE
= 0)
V
CE
= 800 V
V
CE
= 800 V
T
j
= 125
o
C
100
500
I
CEO
Collector Cut-off
Current (I
B
= 0)
Collector-Emitter
Sustaining Voltage
Emitter-Base Voltage
V
CE
= 400 V
250
V
CEO(sus)
I
C
= 100 mA
L = 25 mH
400
V
V
EBO
V
CE(sat)
I
E
= 10 mA
9
V
Collector-Emitter
Saturation Voltage
I
C
= 1 A
I
C
= 2 A
I
C
= 3 A
I
B
= 0.2 A
I
B
= 0.4 A
I
B
= 0.8 A
0.5
0.7
1.1
V
V
V
V
BE(sat)
Base-Emitter
Saturation Voltage
I
C
= 1 A
I
C
= 2 A
I
B
= 0.2 A
I
B
= 0.4 A
1.1
1.2
V
V
h
FE
DC Current Gain
I
C
= 2 A
I
C
= 10 mA
V
CE
= 5 V
V
CE
= 5 V
8
10
t
s
t
f
INDUCTIVE LOAD
Storage Time
Fall Time
I
C
= 2 A
V
BE(off)
= -5 V
V
CL
= 250 V
I
B1
= 0.4 A
R
BB
= 0
L = 200
μ
H
I
B1
= 0.4 A
R
BB
= 0
L = 200
μ
H
0.6
40
1.2
100
μ
s
ns
t
s
t
f
INDUCTIVE LOAD
Storage Time
Fall Time
I
C
= 2 A
V
BE(off)
= -5 V
V
CL
= 250 V
T
j
= 125
o
C
0.9
70
μ
s
ns
Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5 %
Safe Operating Areas
Derating Curves
BULD38
2/6
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