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參數(shù)資料
| 型號(hào)： | BULB128D-1 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| 中文描述： | 高壓快速開關(guān)NPN電源晶體管 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 210K |
| 代理商： | BULB128D-1 |
BULB128D-1
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
I
STMicroelectronics PREFERRED
SALESTYPE
I
NPN TRANSISTOR
I
HIGH VOLTAGE CAPABILITY
I
LOW SPREAD OF DYNAMIC PARAMETERS
I
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
I
VERY HIGH SWITCHING SPEED
I
INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATIONS:
I
ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
I
FLYBACK AND FORWARD SINGLE
TRANSISTOR LOW POWER CONVERTERS
DESCRIPTION
The device is manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
The device is designed for use in lighting
applications and low cost switch-mode power
supplies.
INTERNAL SCHEMATIC DIAGRAM
September 2003
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CES
V
CEO
V
EBO
Parameter
Value
700
400
V
(BR)EBO
Unit
V
V
V
Collector-Emitter Voltage (V
BE
= 0)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage
(I
C
= 0, I
B
= 2 A, t
p
< 10
μ
s, T
j
< 150
o
C)
Collector Current
Collector Peak Current (t
p
< 5 ms)
Base Current
Base Peak Current (t
p
< 5 ms)
Total Dissipation at T
c
= 25
o
C
Storage Temperature
Max. Operating Junction Temperature
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
j
4
8
2
4
A
A
A
A
W
o
C
o
C
70
-65 to 150
150
123
I
2
PAK
(TO-262)
Ordering Code
Marking
Shipment
BULB128D-1
BULB128D
Tube
1/7
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| BULB39D | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BULB128D-BT4 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| BULB128DT4 | 制造商:STMicroelectronics 功能描述: |
| BULB39D | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| BULB39D-1 | 功能描述:兩極晶體管 - BJT HI VLTG FAST SWITCH NPN PWR TRANSISTOR RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BULB39DT4 | 制造商:STMicroelectronics 功能描述:Trans GP BJT NPN 450V 4A 3-Pin(2+Tab) D2PAK T/R 制造商:STMicroelectronics 功能描述:HI-VOLT FAST-SWCH NPN PWR TRANSISTOR |
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