參數(shù)資料
型號: BUL903ED
廠商: 意法半導(dǎo)體
英文描述: POWERLINE: RP20-S_D_TE - 2:1 Wide Input Voltage Range- 20 Watts Output Power- 1.6kVDC Isolation- Fixed Operating Frequency- Six-Sided Continuous Shield- International Safety Standard Approvals- Ul 1950 Component Recognised- Standard 50.8 x40.6x10.2mm Package- Efficiency to 86%
中文描述: 高壓快速開關(guān)NPN電源晶體管
文件頁數(shù): 1/6頁
文件大小: 66K
代理商: BUL903ED
BUL903ED
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
I
INTEGRATED ANTISATURATION AND
PROTECTIONNETWORK
I
INTEGRATED ANTIPARALLELCOLLECTOR
EMITTER DIODE
I
HIGH VOLTAGECAPABILITY
I
LOW SPREADOF DYNAMIC PARAMETERS
I
MINIMUMLOT-TO-LOT SPREAD FOR
RELIABLEOPERATION
I
VERYHIGH SWITCHING SPEED
I
ARCING TEST SELFPROTECTED
APPLICATIONS
I
LAMP ELECTRONIC BALLASTFOR
FLUORESCENT LIGHTINGUSING 277V
HALF BRIDGECURRENT-FED
CONFIGURATION
DESCRIPTION
The BUL903ED is manufactured using high
voltage Multi Epitaxial Planar technology for high
switching speeds and high voltagecapability.
The device has been designed in order to
operate
without
baker
protection. This enables saving from 2 up to 10
componentsin the application.
clamp
and
transil
INTERNAL SCHEMATIC DIAGRAM
June 1998
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
j
Parameter
Value
900
400
7
5
8
2
4
70
-65 to 150
150
Unit
V
V
V
A
A
A
A
W
o
C
o
C
Collector-Emitter Voltage (V
BE
= 0)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (IC = 0)
Collector Current
Collector Peak Current (t
p
<5 ms)
Base Current
Base Peak Current (t
p
<5 ms)
Total Dissipation at Tc = 25
o
C
Storage Temperature
Max. Operating Junction Temperature
1
2
3
TO-220
1/6
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