參數(shù)資料
型號： BUL62B
廠商： SEMELAB LTD
元件分類： 功率晶體管
英文描述： ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
中文描述： 8 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-251
封裝： IPAK-3
文件頁數(shù)： 1/2頁
文件大?。?/td> 19K
代理商： BUL62B
BUL62B
LAB
SEME
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 3/95
ADVANCED
DISTRIBUTED BASE DESIGN
HIGH VOLTAGE
HIGH SPEED NPN
SILICON POWER TRANSISTOR
SEMEFAB DESIGNED AND DIFFUSED DIE
HIGH VOLTAGE
FAST SWITCHING
HIGH ENERGY RATING
Designed for use in
electronic ballast applications
FEATURES
Multi–base for efficient energy distribution
across the chip resulting in significantly
improved switching and energy ratings
across full temperature range.
Ion implant and high accuracy masking for
tight control of characteristics from batch to
batch.
Triple Guard Rings for improved control of
high voltages.
V
CBO
V
CEO
V
EBO
I
C
I
C(PK)
I
B
P
tot
T
stg
Collector – Base Voltage
Collector – Emitter Voltage (I
B
= 0)
Emitter – Base Voltage (I
C
= 0)
Continuous Collector Current
Peak Collector Current
Base Current
Total Dissipation at T
case
= 25°C
Operating and Storage Temperature Range
800V
400V
10V
8A
12A
4A
25W
–55 to +150°C
MECHANICAL DATA
Dimensions in mm (inches)
6.40 (0.252)
6.78 (0.267)
5.21 (0.205)
5.46 (0.215)
5.97 (0.235)
6.22 (0.245)
2.31
(0.091)
Typ.
2.31
(0.091)
Typ.
4.60 (0.181)
Typ.
8.89 (0.350)
9.78 (0.385)
1.09 (0.043)
1.30 (0.051)
0.76 (0.030)
1.14 (0.045)
0.64 (0.025)
0.89 (0.035)
2.18 (0.086)
2.44 (0.096)
0.84 (0.033)
0.94 (0.037)
0.46 (0.018)
0.61 (0.024)
1.04 (0.041)
1.14 (0.045)
1
2
3
I–PAK (TO–251)
Pin 2 – Collector
Pin 1 – Base
Pin 3 – Emitter
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
相關(guān)PDF資料
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BUL63B ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
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