- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄385201 > BUL66A (SEMELAB LTD) POWERLINE: RP20-S_D_TE - 2:1 Wide Input Voltage Range- 20 Watts Output Power- 1.6kVDC Isolation- Fixed Operating Frequency- Six-Sided Continuous Shield- International Safety Standard Approvals- Ul 1950 Component Recognised- Standard 50.8 x40.6x10.2mm Package- Efficiency to 86% PDF資料下載
參數(shù)資料
| 型號： | BUL66A |
| 廠商： | SEMELAB LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | POWERLINE: RP20-S_D_TE - 2:1 Wide Input Voltage Range- 20 Watts Output Power- 1.6kVDC Isolation- Fixed Operating Frequency- Six-Sided Continuous Shield- International Safety Standard Approvals- Ul 1950 Component Recognised- Standard 50.8 x40.6x10.2mm Package- Efficiency to 86% |
| 中文描述： | 16 A, 160 V, NPN, Si, POWER TRANSISTOR, TO-251 |
| 封裝： | IPAK-3 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 19K |
| 代理商： | BUL66A |
BUL66A
LAB
SEME
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 2/97
ADVANCED
DISTRIBUTED BASE DESIGN
HIGH VOLTAGE
HIGH SPEED NPN
SILICON POWER TRANSISTOR
SEMEFAB DESIGNED AND DIFFUSED DIE
HIGH VOLTAGE
FAST SWITCHING
HIGH ENERGY RATING
Designed for use in
electronic ballast applications
FEATURES
Multi–base for efficient energy distribution
across the chip resulting in significantly
improved switching and energy ratings
across full temperature range.
Ion implant and high accuracy masking for
tight control of characteristics from batch to
batch.
Triple Guard Rings for improved control of
high voltages.
V
CBO
V
CEO
V
EBO
I
C
I
C(PK)
I
B
P
tot
T
stg
Collector – Base Voltage(I
E
=0)
Collector – Emitter Voltage (I
B
= 0)
Emitter – Base Voltage (I
C
= 0)
Continuous Collector Current
Peak Collector Current
Base Current
Total Dissipation at T
case
= 25°C
Operating and Storage Temperature Range
350V
160V
10V
16A
25A
5A
25W
–55 to +150°C
MECHANICAL DATA
Dimensions in mm
6.40 (0.252)
6.78 (0.267)
5.21 (0.205)
5.46 (0.215)
5.97 (0.235)
6.22 (0.245)
2.31
(0.091)
Typ.
2.31
(0.091)
Typ.
4.60 (0.181)
Typ.
8.89 (0.350)
9.78 (0.385)
1.09 (0.043)
1.30 (0.051)
0.76 (0.030)
1.14 (0.045)
0.64 (0.025)
0.89 (0.035)
2.18 (0.086)
2.44 (0.096)
0.84 (0.033)
0.94 (0.037)
0.46 (0.018)
0.61 (0.024)
1.04 (0.041)
1.14 (0.045)
1
2
3
I-PAK(TO251)
Pin 2 – Collector
Pin 1 – Base
Pin 3 – Emitter
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BUL66B | POWERLINE: RP20-S_DEW - 4:1 Wide Input Voltage Range- 20 Watts Output Power- 1.6kVDC Isolation- Fixed Operating Frequency- Six-Sided Continuous Shield- Ul 1950 Component Recognised- Standard 50.8 x40.6x10.2mm Package- Efficiency to 84% |
| BUL68A | ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR |
| BUL68B | ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR |
| BUL72A | RP20 (FW) Series - Powerline Regulated DC-DC Converters; Input Voltage (Vdc): 48V; Output Voltage (Vdc): 12V; 4:1 Wide Input Voltage Range; 20 Watts Regulated Output Power; 1.6kVDC Isolation; Over Current and Over Voltage Protection; Six-Sided Shield; No Derating to 63??C; Standard 2? x 1? Package and Pinning; Efficiency to 86% |
| BUL72B | ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUL66B | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR |
| BUL67 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| BUL6822 | 制造商:JINANJINGHENG 制造商全稱:Jinan Jingheng (Group) Co.,Ltd 功能描述:TRANSISTORE |
| BUL6825 | 制造商:JMNIC 制造商全稱:Quanzhou Jinmei Electronic Co.,Ltd. 功能描述:Silicon Power Transistors |
| BUL68A | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。