參數(shù)資料
型號(hào)： BUL62A
廠商： SEMELAB LTD
元件分類： 功率晶體管
英文描述： RP20 (FW) Series - Powerline Regulated DC-DC Converters; Input Voltage (Vdc): 48V; Output Voltage (Vdc): 5V; 4:1 Wide Input Voltage Range; 20 Watts Regulated Output Power; 1.6kVDC Isolation; Over Current and Over Voltage Protection; Six-Sided Shield; No Derating to 63??C; Standard 2? x 1? Package and Pinning; Efficiency to 86%
中文描述： 6 A, 500 V, NPN, Si, POWER TRANSISTOR, TO-251
封裝： IPAK-3
文件頁數(shù)： 1/4頁
文件大小： 64K
代理商： BUL62A
BUL62A
LAB
SEME
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 3/95
ADVANCED
DISTRIBUTED BASE DESIGN
HIGH VOLTAGE
HIGH SPEED NPN
SILICON POWER TRANSISTOR
SEMEFAB DESIGNED AND DIFFUSED DIE
HIGH VOLTAGE
FAST SWITCHING
HIGH ENERGY RATING
Designed for use in
electronic ballast applications
FEATURES
Multi–base for efficient energy distribution
across the chip resulting in significantly
improved switching and energy ratings
across full temperature range.
Ion implant and high accuracy masking for
tight control of characteristics from batch to
batch.
Triple Guard Rings for improved control of
high voltages.
V
CBO
V
CEO
V
EBO
I
C
I
C(PK)
I
B
P
tot
T
stg
Collector – Base Voltage
Collector – Emitter Voltage (I
B
= 0)
Emitter – Base Voltage (I
C
= 0)
Continuous Collector Current
Peak Collector Current
Base Current
Total Dissipation at T
case
= 25°C
Operating and Storage Temperature Range
1000V
500V
10V
6A
10A
2.5A
25W
–55 to +150°C
MECHANICAL DATA
Dimensions in mm (inches)
6.40 (0.252)
6.78 (0.267)
5.21 (0.205)
5.46 (0.215)
5.97 (0.235)
6.22 (0.245)
2.31
(0.091)
Typ.
2.31
(0.091)
Typ.
4.60 (0.181)
Typ.
8.89 (0.350)
9.78 (0.385)
1.09 (0.043)
1.30 (0.051)
0.76 (0.030)
1.14 (0.045)
0.64 (0.025)
0.89 (0.035)
2.18 (0.086)
2.44 (0.096)
0.84 (0.033)
0.94 (0.037)
0.46 (0.018)
0.61 (0.024)
1.04 (0.041)
1.14 (0.045)
1
2
3
I–PAK (TO–251)
Pin 2 – Collector
Pin 1 – Base
Pin 3 – Emitter
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
相關(guān)PDF資料
PDF描述
BUL62B ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
BUL63B ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
BUL64A ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
BUL64B POWERLINE: RP20-S_DF - 2:1 Wide Input Voltage Range- 20 Watts Output Power- 1.6kVDC Isolation- Fixed Operating Frequency- Six-Sided Continuous Shield- International Safety Standard Approvals- Standard 50.8 x25.4x10.2mm Package- Efficiency to 89%
BUL65B POWERLINE: RP20-S_DF - 2:1 Wide Input Voltage Range- 20 Watts Output Power- 1.6kVDC Isolation- Fixed Operating Frequency- Six-Sided Continuous Shield- International Safety Standard Approvals- Standard 50.8 x25.4x10.2mm Package- Efficiency to 89%
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BUL62B 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
BU-L6-313TIN 功能描述:LUG 6 AWG 5/16" STUD TIN 制造商:mueller electric co 系列:- 包裝:散裝 零件狀態(tài):在售 端子類型:圓形，管狀 螺柱/凸片尺寸:5/16 接線柱 厚度:0.065"（1.65mm） 寬度 - 外邊緣:0.550"（13.97mm） 長(zhǎng)度 - 總:1.470"（37.34mm） 安裝類型:自由懸掛 端接:壓接 線規(guī):6 AWG 絕緣:非絕緣 特性:- 顏色:- 觸頭材料:銅 觸頭鍍層:錫 絕緣層直徑:- 材料 - 絕緣:- 標(biāo)準(zhǔn)包裝:1
BUL63A 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:ADVANCED DISTRIBUTED BASE DESIGN
BUL63B 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
BUL642D2 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:High Speed, High Gain Bipolar NPN Transistor with Integrated Collector−Emitter and Built−in Efficient Antisaturation Network
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