參數(shù)資料
型號： BUK9620-100A
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： TrenchMOS logic level FET
中文描述： 63 A, 100 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： PLASTIC, D2PAK-3
文件頁數(shù)： 6/15頁
文件大?。?/td> 321K
代理商： BUK9620-100A
Philips Semiconductors
BUK9520-100A; BUK9620-100A
TrenchMOS logic level FET
Product specification
Rev. 01 — 7 February 2001
6 of 15
9397 750 07915
Philips Electronics N.V. 2001. All rights reserved.
Source-drain diode
V
SD
source-drain (diode forward)
voltage
reverse recovery time
recovered charge
I
S
= 25 A; V
GS
= 0 V;
Figure 15
I
S
= 20 A;dI
S
/dt =
100 A/
μ
s
V
GS
=
10 V; V
DS
= 30 V
0.85
1.2
V
t
rr
Q
r
76
282
ns
nC
Table 5:
T
j
= 25
°
C unless otherwise specified
Symbol
Parameter
Characteristics
…continued
Conditions
Min
Typ
Max
Unit
T
j
= 25
°
C; t
p
= 300
μ
s
Fig 5.
Output characteristics: drain current as a
function of drain-source voltage; typical values.
T
j
= 25
°
C; I
D
= 25 A
Fig 6.
Drain-source on-state resistance as a function
of gate-source voltage; typical values.
T
j
= 25
°
C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
03nd85
0
50
100
150
200
250
0
2
4
6
8
10
VDS (V)
ID
VGS (V) =
2.2
3
4
10
5
4.6
03nd84
12
13
14
15
16
2
4
6
8
10
VGS (V)
RDSon
(m
)
03nd86
10
20
30
40
0
50
100
150
200
250
ID (A)
RDSon
(m
)
VGS (V) = 3
3.2 3.43.63.8
5
03aa29
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
-60
-20
20
60
100
140
Tj (oC)
180
a
a
R
DSon 25 C
)
---------------------------
=
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